Abstract: In a bandgap voltage reference with low package shift, a proportional to absolute temperature (PTAT) voltage is generated using a single diode biased at two different current levels at two different times. Using the same diode for both current density measurements removes the absolute value of the base-emitter junction voltage (Vbe) and any package shift in the PTAT voltage. The bandgap voltage reference can be implemented in a single or differential circuit topology. In some implementations, the bandgap voltage reference can include circuitry for curvature correction.

Abstract: In a bandgap voltage reference with low package shift, a proportional to absolute temperature (PTAT) voltage is generated using a single diode biased at two different current levels at two different times. Using the same diode for both current density measurements removes the absolute value of the base-emitter junction voltage (Vbe) and any package shift in the PTAT voltage. The bandgap voltage reference can be implemented in a single or differential circuit topology. In some implementations, the bandgap voltage reference can include circuitry for curvature correction.

Abstract: In a bandgap voltage reference with low package shift, a proportional to absolute temperature (PTAT) voltage is generated using a single diode biased at two different current levels at two different times. Using the same diode for both current density measurements removes the absolute value of the base-emitter junction voltage (Vbe) and any package shift in the PTAT voltage. The bandgap voltage reference can be implemented in a single or differential circuit topology. In some implementations, the bandgap voltage reference can include circuitry for curvature correction.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate, one or more devices in or on the semiconductor substrate, and a dielectric layer above the one or more devices, wherein the dielectric layer has openings over at least portions of the one or more devices. The semiconductor integrated circuit also includes plastic packaging material (e.g., plastic granules) on a top surface of the dielectric layer and over the openings. In some implementations, the one or more devices include bi-polar transistors, and the openings in the dielectric layer are located over base-emitter junctions of the bi-polar devices.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate, one or more devices in or on the semiconductor substrate, and a dielectric layer above the one or more devices, wherein the dielectric layer has openings over at least portions of the one or more devices. The semiconductor integrated circuit also includes plastic packaging material (e.g., plastic granules) on a top surface of the dielectric layer and over the openings. In some implementations, the one or more devices include bi-polar transistors, and the openings in the dielectric layer are located over base-emitter junctions of the bi-polar devices.

Abstract: Method and apparatus for temperature compensation of transhybrid loss in a data access arrangement (DAA) is provided. A thermal compensation device is situated in proximity to a thermally sensitive device. If devices which dissipate substantial power cause heating of the thermally sensitive device and change its characteristics, the thermal compensation device is also heated and compensates for the changes. Thus, a DAA that is unaffected by temperature changes and self-heating is provided. The DAA is suitable for use with data communications equipment utilizing echo cancelling circuitry, such as CCITT V.32 and V.32 bis modems. When used with such modems, the present invention avoids the need to perform retraining and equalization during changes in DAA operating temperature.

Abstract: A current differential sense amplifier for static RAM cells which couple one of a pair of bit lines to a current source for a high speed read operation. The sense amplifier has current mirrors which amplify the current on each of the bit lines. The amplified currents are fed into an active load which has an output node which rises and falls in voltage depending upon the current mismatch. An inverter connected to the output node speeds the slow rate of the node.

Abstract: The present invention is directed to apparatus for providing temperature compensated exponential gain voltage to an AGC amplifier. The present invention uses emitter coupled pairs of transistors to implement an exponential gain control function. The present invention adds additional circuitry to drive the bases of the transistor pairs. The additional circuitry adds one gain stage in which the bias current is proportional to temperature and a second gain stage with a bias current which is constant over temperature. These gain stages, in combination with the transistor pairs, have no temperature dependence and retain the exponential gain function. This circuitry of the present invention allows a user to set the gain of the amplifier by an external voltage source providing a gain which is temperature independent. An advantage of the present invention is the cancellation of temperature dependence without the use of any temperature sensitive components.