Abstract: Circuitry for processing a response from an electrochemical cell to a stimulus, the circuitry comprising: sense circuitry configured to measure the response of the electrochemical cell to the stimulus; and processing circuitry configured to: sample the measured response to obtain a plurality of samples; and determine a first average signal based on a first number of samples of the plurality of samples; and output the first average signal, wherein the first number of samples in the first average signal is selected to minimise a first variance in the first number of samples.

Abstract: An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near the devices that would otherwise absorb hydrogen and exhibit the variation as the hydrogen migrates in the devices. The method includes forming or mounting the devices on a top surface of the semiconductor wafer in die areas of the substrate, forming semiconductor structures in the semiconductor die areas, forming a getter layer above or adjacent to the devices in the die areas, and processing the wafer with one or more processes exposing the wafer to vapor having a hydrogen content, whereby an amount of hydrogen absorbed by the devices is reduced by presence of the getter layer. The method produces wafers including semiconductor dies with reduced hydrogen absorption by the devices and packaged ICs including the dies.

Abstract: A method includes preferentially placing fill regions adjacent to transistors of a particular conductivity type, such as p-channel transistors, for a plurality of standard cell instances of a device design. The method also includes evaluating all transistors of the first conductivity type prior to evaluating any transistors of a second conductivity type. The second conductivity type is opposite the first conductivity type. For each transistor being evaluated, it is determined whether a criterion is me. A fill region is placed within a field isolation region adjacent to the transistor if the criterion is met.

Abstract: A method implemented at a computer aided design tool includes preferentially placing fill regions adjacent to transistors of a first conductivity type for a plurality of standard cell instances of a device design to reduce leakage of the plurality of standard cell instances. Preferentially placing the fill regions includes preferentially placing the fill regions adjacent to transistors of a first conductivity type as compared to placing the fill regions adjacent to transistors of a second conductivity type that is opposite the first conductivity type.