Patents by Inventor Scott Pook

Scott Pook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming vertically-stacked structures, and methods of forming vertically-stacked memory cells
    Patent number: 8778762
    Abstract: Some embodiments include methods of forming vertically-stacked structures, such as vertically-stacked memory cells. A first hardmask is formed over a stack of alternating electrically conductive levels and electrically insulative levels. A first opening is formed through the first hardmask and the stack. Cavities are formed to extend into the electrically conductive levels. A fill material is formed within the first opening and within the cavities. A second hardmask is formed over the first hardmask and over the fill material. A second opening is formed through the second hardmask. The second opening is narrower than the first opening. The second opening is extended into the fill material to form an upwardly-opening container from the fill material. Sidewalls of the upwardly-opening container are removed, while leaving the fill material within the cavities as a plurality of vertically-stacked structures.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: July 15, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Saurabh Keshav, Scott Pook, Fatma Arzum Simsek-Ege
  • Methods of Forming Vertically-Stacked Structures, and Methods of Forming Vertically-Stacked Memory Cells
    Publication number: 20140162418
    Abstract: Some embodiments include methods of forming vertically-stacked structures, such as vertically-stacked memory cells. A first hardmask is formed over a stack of alternating electrically conductive levels and electrically insulative levels. A first opening is formed through the first hardmask and the stack. Cavities are formed to extend into the electrically conductive levels. A fill material is formed within the first opening and within the cavities. A second hardmask is formed over the first hardmask and over the fill material. A second opening is formed through the second hardmask. The second opening is narrower than the first opening. The second opening is extended into the fill material to form an upwardly-opening container from the fill material. Sidewalls of the upwardly-opening container are removed, while leaving the fill material within the cavities as a plurality of vertically-stacked structures.
    Type: Application
    Filed: December 7, 2012
    Publication date: June 12, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Saurabh Keshav, Scott Pook, Fatma Arzum Simsek-Ege