Patents by Inventor Scott R. Chegwidden

Scott R. Chegwidden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual-layer EUV mask absorber with trenches having opposing sidewalls that are straight and parallel
    Patent number: 7410733
    Abstract: A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.
    Type: Grant
    Filed: June 3, 2005
    Date of Patent: August 12, 2008
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Hsing-Chien Ma, Scott R. Chegwidden
  • Double-metal EUV mask absorber
    Patent number: 6913706
    Abstract: A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.
    Type: Grant
    Filed: December 28, 2002
    Date of Patent: July 5, 2005
    Assignee: Intel Corporation
    Inventors: Pei-Yang Yan, Hsing-Chien Ma, Scott R. Chegwidden
  • Double-metal EUV mask absorber
    Publication number: 20040124174
    Abstract: A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.
    Type: Application
    Filed: December 28, 2002
    Publication date: July 1, 2004
    Inventors: Pei-Yang Yan, Hsing-Chien Ma, Scott R. Chegwidden