Patents by Inventor SCOTT R. KERN

SCOTT R. KERN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED III-V NITRIDE LAYERS
    Publication number: 20020008245
    Abstract: A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
    Type: Application
    Filed: November 17, 1999
    Publication date: January 24, 2002
    Inventors: WERNER GOETZ, SCOTT R. KERN