Patents by Inventor Scott Robert Perusse

Scott Robert Perusse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods to cure the effects of hydrogen annealing on ferroelectric capacitors
    Patent number: 6265230
    Abstract: A ferroelectric memory cell integrated with silicon circuitry which require a forming-gas anneal of the silicon circuitry after the ferroelectric stack has been formed. The ferroelectric layer may have a composition such that there is no space in the lattice of the ferroelectric phase to accommodate atomic hydrogen or have a composition with a Curie temperature below the temperature of the forming-gas anneal. Preferably, there is no upper platinum electrode, or it is deposited after the forming-gas anneal. A metal-oxide upper electrode serves as barrier to the forming-gas anneal, and an intermetallic layer positioned above the ferroelectric stack serves as an even better barrier. Forming-gas damage to the ferroelectric stack can be removed by a recovery anneal in a hydrogen-free environment, preferably performed at a temperature above the Curie temperature.
    Type: Grant
    Filed: January 20, 2000
    Date of Patent: July 24, 2001
    Assignees: Telcordia Technologies, Inc., University of Maryland at College Park
    Inventors: Sanjeev Aggarwal, Scott Robert Perusse, Ramamoorthy Ramesh
  • Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
    Patent number: 6115281
    Abstract: A ferroelectric memory cell integrated with silicon circuitry which require a forming-gas anneal of the silicon circuitry after the ferroelectric stack has been formed. The ferroelectric layer may have a composition such that there is no space in the lattice of the ferroelectric phase to accommodate atomic hydrogen or have a composition with a Curie temperature below the temperature of the forming-gas anneal. Preferably, there is no upper platinum electrode, or it is deposited after the forming-gas anneal. A metal-oxide upper electrode serves as barrier to the forming-gas anneal, and an intermetallic layer positioned above the ferroelectric stack serves as an even better barrier. Forming-gas damage to the ferroelectric stack can be removed by a recovery anneal in a hydrogen-free environment, preferably performed at a temperature above the Curie temperature.
    Type: Grant
    Filed: September 11, 1998
    Date of Patent: September 5, 2000
    Assignees: Telcordia Technologies, Inc., University of Maryland
    Inventors: Sanjeev Aggarwal, Scott Robert Perusse, Ramamoorthy Ramesh