Patents by Inventor Scott Semans

Scott Semans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190232071
    Abstract: A gel deployment device for use with an electrotherapy system includes a substrate and a conductive surface mechanically coupled to the substrate. The device includes one or more gel reservoirs disposed on the substrate, each surrounding an open center portion, and a fluid pressure source in fluid communication with the one or more gel reservoirs. At least one frangible seal is disposed within the open center portion and configured to release a volume of conductive gel from the one or more gel reservoirs to the conductive surface.
    Type: Application
    Filed: April 11, 2019
    Publication date: August 1, 2019
    Inventors: Robert J. Hulings, Scott D. Quinnell, Dale Ballard, Roland A. Seman
  • Patent number: 10307605
    Abstract: A gel deployment device for use with an electrotherapy system is provided. The device includes a plurality of gel reservoirs disposed on a substrate, each of the plurality of gel reservoirs containing conductive gel. Each of the gel reservoirs are positioned adjacent to at least one seal such that the seal restricts flow of the conductive gel. The seal can be configured to release the conductive gel from the gel reservoir in response to pressure being applied about a perimeter of the seal at, for example, multiple points about the perimeter or substantially equally about the perimeter of the seal. In an example, each gel reservoir can be shaped such that the gel reservoir partially or fully surrounds a seal. In another example, multiple gel reservoirs can be arranged in clusters such that the multiple gel reservoirs are positioned about a single seal.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: June 4, 2019
    Assignee: ZOLL Medical Corporation
    Inventors: Robert J Hulings, Scott D Quinnell, Dale Ballard, Ronald A Seman
  • Patent number: 8889978
    Abstract: A method of depositing III-V solar collection materials on a GeSn template on a silicon substrate including the steps of providing a crystalline silicon substrate and epitaxially growing a single crystal GeSn layer on the silicon substrate using a grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 ?m to approximately 5 ?m. A layer of III-V solar collection material is epitaxially grown on the graded single crystal GeSn layer. The graded single crystal GeSn layer includes Sn up to an interface with the layer of III-V solar collection material.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 18, 2014
    Assignee: Translucent, Inc.
    Inventors: Radek Roucka, Michael Lebby, Scott Semans
  • Publication number: 20140077240
    Abstract: A photonic structure including a substrate of either crystalline silicon or germanium and a multilayer distributed Bragg reflector (DBR) positioned on the substrate. The DBR includes material substantially crystal lattice matching the DBR to the substrate. The DBR includes a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO). A photonic device including multilayers of single crystal IV material positioned on the DBR and including material substantially crystal lattice matching the DBR to the photonic device.
    Type: Application
    Filed: September 17, 2012
    Publication date: March 20, 2014
    Inventors: Radek Roucka, Michael Lebby, Scott Semans, Andrew Clark
  • Publication number: 20140077338
    Abstract: An electronic device includes IV material grown on a silicon substrate. The device includes a crystalline silicon substrate and a rare earth structure epitaxially grown on the silicon substrate. The rare earth structure includes a layer of a rare earth oxide with electrical insulating characteristics so that the rare earth structure provides electrical insulation from the silicon substrate. A single crystal IV material film is epitaxially grown on the rare earth structure. The single crystal IV material film includes one of crystal lattice matching or crystal lattice mismatching the IV material film to the rare earth structure.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Inventors: Radek Roucka, Michael Lebby, Scott Semans
  • Publication number: 20140077339
    Abstract: A IV or III-V device is fabricated on a germanium template on a silicon substrate and includes a thin layer of Ge epitaxially grown on a silicon substrate. The thin layer includes Ge delta doped with Sn at the silicon substrate. A single crystal layer of Ge is epitaxially grown on the thin layer of Ge doped with Sn. A structure including one of IV material and III-V material is epitaxially grown on the single crystal layer of Ge.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Inventors: Radek Roucka, Michael Lebby, Scott Semans
  • Publication number: 20140076390
    Abstract: A method of depositing III-V solar collection materials on a GeSn template on a silicon substrate including the steps of providing a crystalline silicon substrate and epitaxially growing a single crystal GeSn layer on the silicon substrate using a grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 ?m to approximately 5 ?m. A layer of III-V solar collection material is epitaxially grown on the graded single crystal GeSn layer. The graded single crystal GeSn layer includes Sn up to an interface with the layer of III-V solar collection material.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Inventors: Radek Roucka, Michael Lebby, Scott Semans
  • Publication number: 20140053894
    Abstract: A method of fabricating a solar cell on a silicon substrate includes providing a crystalline silicon substrate, selecting a grading profile, epitaxially growing a template on the silicon substrate including a single crystal GeSn layer using the grading profile to grade Sn through the layer. The single crystal GeSn layer has a thickness in a range of approximately 3 ?m to approximately 5 ?m. At least two layers of high band gap material are epitaxially and sequentially grown on the template to form at least three junctions. The grading profile starts with the Sn at or near zero with the Ge at zero, the percentage of Sn varies to a maximum mid-area, and reduces the percentage of Sn to zero adjacent an upper surface.
    Type: Application
    Filed: August 23, 2012
    Publication date: February 27, 2014
    Inventors: Radek Roucka, Michael Lebby, Scott Semans
  • Patent number: 8178841
    Abstract: Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.
    Type: Grant
    Filed: July 28, 2009
    Date of Patent: May 15, 2012
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans
  • Publication number: 20120073648
    Abstract: The invention relates to photovoltaic device structures of more than one layer comprising rare earth compounds and Group IV materials enabling spectral harvesting outside the conventional absorption limits for silicon.
    Type: Application
    Filed: September 24, 2010
    Publication date: March 29, 2012
    Inventors: Andrew Clark, Robin Smith, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8049100
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: November 1, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039737
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Patent number: 8039736
    Abstract: The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: October 18, 2011
    Inventors: Andrew Clark, Robin Smith, Scott Semans, Richard Sewell
  • Patent number: 8039738
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100122720
    Abstract: The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 20, 2010
    Applicant: Translucent, Inc.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100116315
    Abstract: The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 13, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100109047
    Abstract: Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
    Type: Application
    Filed: November 16, 2009
    Publication date: May 6, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans, F. Erdem Arkun, Michael Lebby
  • Publication number: 20100038541
    Abstract: Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.
    Type: Application
    Filed: July 28, 2009
    Publication date: February 18, 2010
    Applicant: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Robin Smith, Richard Sewell, Scott Semans
  • Publication number: 20100038521
    Abstract: The use of rare-earth (REO, N, P) based materials to covert long wavelength photons to shorter wavelength photons that can be absorbed in a photovoltaic device (up-conversion) and (REO, N, P) materials which can absorb a short wavelength photon and re-emit one (downshifting) or more longer wavelength photons is disclosed. The wide spectral range of sunlight overlaps with a multitude of energy transitions in rare-earth materials, thus offering multiple up-conversion pathways. The refractive index contrast of rare-earth materials with silicon enables a DBR with >90% peak reflectivity and a stop band greater than 150 nm.
    Type: Application
    Filed: March 20, 2009
    Publication date: February 18, 2010
    Applicant: Translucent, Inc.
    Inventors: ANDREW CLARK, ROBIN SMITH, SCOTT SEMANS, RICHARD SEWELL
  • Publication number: 20020121274
    Abstract: An aperture plate comprises a plate body having a top surface, a bottom surface, and tapered walls that form a plurality of apertures that taper from the bottom surface to the top surface wherein the plate body comprises a base material and a corrosion resistive material plating at least the tapered walls. The aperture plate can be produced by electroplating a mandrel wherein the mandrel is placed within a solution containing a material that is to be deposited onto the mandrel. Electrical current is applied to the mandrel to form the aperture plate on the mandrel. The process can be repeated so as to deposit a second layer, such as a corrosion resistive material, over a base layer material. In such fashion, a laminated electroformed aperture plate can be produced.
    Type: Application
    Filed: October 2, 2001
    Publication date: September 5, 2002
    Applicant: AEROGEN, INC.
    Inventors: Scott Borland, Jonathan Martin, Scott Semans