Abstract: Selective metal capping and/or liner materials and processes described herein may enable hermetically encapsulating metal interconnects and metal-silicon interfaces in transistor contacts. In one example, an IC structure includes an interconnect layer with a conductive interconnect that is lined with a ruthenium-based liner, and capped with a selectively deposited cap that includes one or more of ruthenium, molybdenum, tungsten, rhodium, iridium, rhenium, and niobium individually or in an alloy. In another example, an IC structure includes a transistor contact structure with a selectively deposited conductive cap over an interface material, where the conductive cap material is absent or substantially thinner on sidewalls of the contact opening. In one example, the conductive cap material over the Si-metal interface includes one or more of ruthenium, molybdenum, tungsten, rhodium, iridium, platinum, rhenium, cobalt, and niobium individually or in combination.

Abstract: Semiconductor devices having a conductive layer comprising carbon and nitrogen are provided. Semiconductor devices can include regions having dielectric on dielectric structures. Semiconductor devices can also include a conductive layer comprising carbon and nitrogen that is between two conductive regions. Methods of manufacturing semiconductor devices using reagents comprising isocyanate molecules are provided.

Abstract: Methods and apparatus utilizing indium-based precursors in semiconductor manufacturing are disclosed. An example apparatus includes a substrate layer, the substrate layer to be included an integrated circuit package, and a photoresist on the substrate layer, the photoresist including indium.

Abstract: Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula BixOyCz on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula R?Bi(NR2)2 or R?2BiNR2 where R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NR2 is piperidine, and R? includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.

Abstract: Precursors and methods related to a tin-based photoresist are disclosed herein. In some embodiments, a method for forming a tin-based photoresist may include exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist having tin clusters; selectively exposing the photoresist to extreme ultraviolet radiation (EUV); and exposing the photoresist to heat to form, in the region, crosslinking between the tin clusters. In some embodiments, the precursor has a formula R1R2Sn(N(CH3)2)2, and R1 and R2 are selected from the group consisting of neo-silyl, neo-pentyl, phenyl, benzyl, methyl-bis(trimethylsilyl), methyl, ethyl, isopropyl, tert-butyl, n-butyl, N,N-dimethylpropylamine, and N, N-dimethlybutylamine. In other embodiments, the precursor includes a chelating alkyl-amine or alkyl-amide ligand featuring a 5 membered or 6 membered tin-based heterocycle bound ?2-C,N with an alkyl group on the ligand backbone, wherein the alkyl group includes methyl, ethyl, vinyl, hydrogen, or tert-butyl.

Abstract: In one aspect, cobalt complexes are described herein. In some embodiments, such cobalt complexes employ bis(phosphine) or bis(imine) ligand and are operable as catalysts for borylation of arenes and aromatic heterocycles.

Abstract: In one aspect, cobalt complexes are described herein. In some embodiments, such cobalt complexes employ bis(phosphine) or bis(imine) ligand and are operable as catalysts for borylation of arenes and aromatic heterocycles.