Patents by Inventor Scott Stevenot

Scott Stevenot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10892197
    Abstract: A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: January 12, 2021
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
  • Publication number: 20180366379
    Abstract: A lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber includes a base plate, an upper plate above the base plate, and a mounting groove surrounding a bond layer located between the base plate and the upper plate. An edge seal including a compressible ring is mounted in the mounting groove such that the compressible ring is axially compressed between the upper plate and the base plate. At least one gas passage is in fluid communication with an annular space between the compressible ring and an inner wall of the mounting groove. The at least gas one passage extends through the base plate and includes a plurality of outlets in fluid communication with the annular space. In some examples, a backing seal may be located between the edge seal and an inner wall of the mounting groove.
    Type: Application
    Filed: August 29, 2018
    Publication date: December 20, 2018
    Inventors: Keith William GAFF, Matthew BUSCHE, Anthony RICCI, Henry S. POVOLNY, Scott STEVENOT
  • Patent number: 10141670
    Abstract: A substrate connector to provide a connection to a substrate during substrate processing includes a spring pin assembly defining a first contact and including a first groove. A retention spring clip includes a body arranged in the first groove and projections extending from the body. A second contact includes a body defining a second groove. The second contact is arranged around the first contact of the spring pin assembly. The projections of the retention spring clip extend into the second groove in the second contact.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: November 27, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventor: Scott Stevenot
  • Patent number: 10090211
    Abstract: A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled base plate, an upper plate above the base plate, and an annular mounting groove surrounding a bond layer located between the base plate and the upper plate. The mounting groove includes an inner wall, an opening of the mounting groove faces radially outward relative to the inner wall, and the mounting groove includes a step extending downward from the upper plate on an upper wall of the groove or extending upward from the base plate on a lower wall of the groove. An edge seal including a compressible ring is mounted in the groove such that the compressible ring is compressed between the upper plate and the base plate to cause an outer surface of the compressible ring to be biased radially outward relative to the inner wall toward the step.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: October 2, 2018
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
  • Publication number: 20150187614
    Abstract: A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising a ring compressed in the groove. A gas source supplies inert gas to the groove and maintains the inert gas at a pressure of 100 mTorr to 100 Torr in the groove.
    Type: Application
    Filed: December 26, 2013
    Publication date: July 2, 2015
    Applicant: Lam Research Corporation
    Inventors: Keith William Gaff, Matthew Busche, Anthony Ricci, Henry S. Povolny, Scott Stevenot
  • Patent number: 8784948
    Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: July 22, 2014
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
  • Publication number: 20120028379
    Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
    Type: Application
    Filed: September 22, 2011
    Publication date: February 2, 2012
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
  • Patent number: 8043430
    Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: October 25, 2011
    Assignee: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
  • Publication number: 20080149596
    Abstract: Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
    Type: Application
    Filed: December 20, 2006
    Publication date: June 26, 2008
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot