Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A III-Nitride field-effect transistor, specifically a HEMT, comprises a channel layer, a barrier layer on the channel layer, an etch stop layer on the cap layer, a dielectric layer on the etch stop layer, a gate recess that extends to the barrier layer, and a gate contact in the gate recess. The etch stop layer may reduce damage associated with forming the recessed gate by not exposing the barrier layer to dry etching. The etch stop layer in the recess is removed and the remaining etch stop layer serves as a passivation layer.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: The present disclosure includes a system and method for tracking links displayed in Web browsers. In some implementations, a method includes receiving a hostname operable to identify an action and an instance of a link displayed through a Web browser. The hostname is unique for a period of time. The one or more actions associated with the displayed link are tracked.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate structure. MESFETS with a selectively doped p-type buffer layer are also provided. Utilization of such a buffer layer may reduce output conductance by a factor of 3 and produce a 3 db increase in power gain over SiC MESFETs with conventional p-type buffer layers. A ground contact may also be provided to the p-type buffer layer and the p-type buffer layer may be made of two p-type layers with the layer formed on the substrate having a higher dopant concentration. SiC MESFETs according to embodiments of the present invention may also utilize chromium as a Schottky gate material. Furthermore, an oxide-nitride-oxide (ONO) passivation layer may be utilized to reduce surface effects in SiC MESFETs.

Abstract: SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate structure. MESFETS with a selectively doped p-type buffer layer are also provided. Utilization of such a buffer layer may reduce output conductance by a factor of 3 and produce a 3 db increase in power gain over SiC MESFETs with conventional p-type buffer layers. A ground contact may also be provided to the p-type buffer layer and the p-type buffer layer may be made of two p-type layers with the layer formed on the substrate having a higher dopant concentration. SiC MESFETs according to embodiments of the present invention may also utilize chromium as a Schottky gate material. Furthermore, an oxide-nitride-oxide (ONO) passivation layer may be utilized to reduce surface effects in SiC MESFETs.

Abstract: SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate structure. MESFETS with a selectively doped p-type buffer layer are also provided. Utilization of such a buffer layer may reduce output conductance by a factor of 3 and produce a 3 db increase in power gain over SiC MESFETs with conventional p-type buffer layers. A ground contact may also be provided to the p-type buffer layer and the p-type buffer layer may be made of two p-type layers with the layer formed on the substrate having a higher dopant concentration. SiC MESFETs according to embodiments of the present invention may also utilize chromium as a Schottky gate material. Furthermore, an oxide-nitride-oxide (ONO) passivation layer may be utilized to reduce surface effects in SiC MESFETs.

Abstract: A microwave power amplifier is comprised of a plurality of series connected amplifier stages. Each stage is provided with a local negative feedback. The addition of the local voltage feedback distribution networks provide correct voltage distribution and equal current distribution for all transistors, such that the peak-to-peak voltage and current swings of each transistor can be set simultaneously to the values required for efficient amplifier operation. The method applies to both FETs and bipolar transistors. The series connected microwave power amplifier is thus characterized as a stack with local voltage feedback networks which provide an equal distribution of voltage across the transistors in the stack. The amplifier stages can be biased and tuned to collectively operate either as a class A or B amplifier.

Abstract: A metal-semiconductor field-effect-transistor (MESFET) is disclosed that exhibits reduced source resistance and higher operating frequencies. The MESFET comprises an epitaxial layer of silicon carbide, and a gate trench in the epitaxial layer that exposes a silicon carbide gate surface between two respective trench edges. A gate contact is made to the gate surface, and with the trench further defines the source and drain regions of the transistor. Respective ohmic metal layers form ohmic contacts on the source and drain regions of the epitaxial layer, and the edges of the metal layers at the trench are specifically aligned with the edges of the epitaxial layer at the trench.