Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer is lattice matched to the overlying monocrystalline material layer. In addition, formation of a compliant substrate may include utilizing a monocrystalline oxygen-doped material layer. The monocrystalline oxygen-doped material layer may prevent contamination of the accommodating buffer layer and may facilitate isolation of devices formed in the overlying monocrystalline material. Further, the monocrystalline oxygen-doped materials may be highly resistive and could reduce or eliminate backgating and sidegating effects.

Abstract: An apparatus for forming a semiconductor structure is provided. The apparatus includes a chamber and a plurality of first material sources positioned at least partially within the chamber. The plurality of first material sources are configured to provide materials for the formation of a monocrystalline accommodating buffer layer on a substrate. The plurality of first material sources includes an oxygen source. At least one second material source is also positioned at least partially within the chamber and is configured to provide material for the formation of a monocrystalline oxygen-doped material layer overlying the monocrystalline accommodating buffer layer. The apparatus also includes an oxygen-adjustment mechanism configured to adjust the partial pressure of oxygen in the chamber.