Abstract: A support structure comprises a base joint coupling a proximal link of the support structure to a base. The proximal link is configured to rotate about a first axis associated with the base joint. The support structure further comprises a linkage mechanism. The linkage mechanism maintains an orientation of an instrument support relative to the base as the support structure is moved from a first configuration to a second configuration. In the second configuration, the support structure is rotated relative to the base about the first axis.

Abstract: A method for planarizing a dielectric layer on a semiconductor wafer while eliminating a mask and etch step, in accordance with the present invention includes providing a semiconductor wafer having trenches formed in a trench region of a substrate, and forming a dielectric layer on the semiconductor wafer to fill the trenches whereby up features form on flat surfaces of the wafer. An edge portion of the semiconductor wafer is polished to remove a portion of the dielectric layer about the edge portions of the semiconductor wafer. The dielectric layer is polished across the entire semiconductor wafer by employing a single non-stacked polishing pad and a slurry to planarize the trench regions and the up features in a single polish step such that a mask step and etch step for reducing the up features are eliminated from the polishing process.