Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

Abstract: The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Systems and methods related to the arrangement of regions containing wavelength-converting materials, and associated articles, are provided.

Abstract: The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Abstract: Light-emitting device methods are disclosed.

Abstract: A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices).

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically connected to a power source. The power source can provide current to the device via the contact structures. The contact structures can be designed to improve current distribution in electronic devices. For example, the contact resistance of the contacts may be modified to improve current distribution (e.g., by controlling the shape and/or structure and/or composition of the contacts). The contact structures may include an intervening layer (e.g., a non-ohmic layer) positioned between a surface of the device and a conductive portion extending from a conductive pad. The intervening layer and/or conductive portions may be designed to have certain shapes (e.g.

Abstract: A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices).

Abstract: Light-emitting device methods are disclosed.

Abstract: Light-emitting device methods are disclosed.