Patents by Inventor Scott W. LeFevre
Scott W. LeFevre has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11538691Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.Type: GrantFiled: March 31, 2021Date of Patent: December 27, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Patent number: 11380554Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.Type: GrantFiled: February 11, 2020Date of Patent: July 5, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Publication number: 20210217628Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.Type: ApplicationFiled: March 31, 2021Publication date: July 15, 2021Applicant: Tokyo Electron LimitedInventors: Subhadeep KAL, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Patent number: 10971372Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.Type: GrantFiled: June 24, 2016Date of Patent: April 6, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Publication number: 20200176266Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.Type: ApplicationFiled: February 11, 2020Publication date: June 4, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Subhadeep KAL, Nihar MOHANTY, Angelique D. RALEY, Aelan MOSDEN, Scott W. LEFEVRE
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Patent number: 10580660Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.Type: GrantFiled: June 24, 2016Date of Patent: March 3, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Publication number: 20160379842Abstract: A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.Type: ApplicationFiled: June 24, 2016Publication date: December 29, 2016Inventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Publication number: 20160379835Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.Type: ApplicationFiled: June 24, 2016Publication date: December 29, 2016Inventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
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Patent number: 9054050Abstract: Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process of alternating chemistries. One process gas mixture includes a halogen-containing silicon gas and oxygen that creates an oxide layer. A second process gas mixture includes a halogen-containing gas and a fluorocarbon gas that etches oxide and silicon.Type: GrantFiled: November 6, 2013Date of Patent: June 9, 2015Assignee: Tokyo Electron LimitedInventors: Scott W. LeFevre, Alok Ranjan
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Publication number: 20150126033Abstract: Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. Techniques include using a continuous process that comprises a cyclic gas-pulsing process of alternating chemistries. One process gas mixture includes a halogen-containing silicon gas and oxygen that creates an oxide layer. A second process gas mixture includes a halogen-containing gas and a fluorocarbon gas that etches oxide and silicon.Type: ApplicationFiled: November 6, 2013Publication date: May 7, 2015Applicant: Tokyo Electron LimitedInventors: Scott W. LeFevre, Alok Ranjan
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Patent number: 8962067Abstract: Processes for real time process control of the Polymer Dispersion Index (PDI) during polymerization processes. By tuning this chain length distribution in real time, a resulting polymer can have predetermined physical properties such as thickness, physical yield strength, decomposition time, thermal stability, etc. Techniques herein can dynamically control chain length distribution through use of a mass density measurement device located within a processing chamber and providing real time feedback of polymer growth. Chamber parameters can be controlled or modified before and during polymerization based on mass density feedback. Such chamber parameters can include pressure, temperature, chemistry, and process gas flow rates and flow periods.Type: GrantFiled: January 24, 2013Date of Patent: February 24, 2015Assignee: Tokyo Electron LimitedInventors: Bruce Adair Altemus, Scott W. LeFevre
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Publication number: 20140205742Abstract: Techniques disclosed herein include apparatus and processes for real time process control of the Polymer Dispersion Index (PDI) during polymerization processes. By tuning this chain length distribution in real time, a resulting polymer can have predetermined physical properties such as thickness, physical yield strength, decomposition time, thermal stability, etc. Techniques herein can dynamically control chain length distribution through use of a mass density measurement device located within a processing chamber and providing real time feedback of polymer growth. Chamber parameters can be controlled or modified before and during polymerization based on mass density feedback. Such chamber parameters can include pressure, temperature, chemistry, and process gas flow rates and flow periods.Type: ApplicationFiled: January 24, 2013Publication date: July 24, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Bruce Adair Altemus, Scott W. LeFevre