Abstract: An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

Abstract: An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

Abstract: An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequent operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

Abstract: A unibody, monolithic, one-piece PBN plasma chamber for an MBE gas plasma source. The chamber has a cylindrical configuration with at least one effusion orifice and a gas inlet opening. The gas inlet opening is preferably communicatively connected to an elongated, tubular inlet member. The inlet member is preferably coupled to a liquid cooled gas source by an intermediary connection member which is preferably constructed of a refxactory metal. The chamber minimizes leakage and maximizes efficiency. A gas plasma source assembly and a method for making the chamber are also disclosed.

Abstract: An atomic hydrogen source. The source has an elongated cylindrical structure with proximal and distal or inner and outer ends. A head structure is disposed at the proximal end for communicative connection with electrical power, gas, temperature control and related systems. A mounting flange is disposed along the length of the source for connection with an MBE or other apparatus. A tube structure is disposed at the distal end for extension into the apparatus. The tube structure includes gas and power conduction elements, including a high temperature resistive filament for cracking gas.