Patents by Inventor Scott W. Wang

Scott W. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
    Patent number: 4616404
    Abstract: An improved lateral polysilicon diode in an integrated circuit structure is disclosed. The diode is characterized by low reverse current leakage, a breakdown voltage of at least 5 volts, and low series resistance permitting high current flow before being limited by saturation. The polysilicon diode comprises a polysilicon substrate having a first zone sufficiently doped to provide a first semiconductor type and a second zone sufficiently doped to provide a second semiconductor type whereby the junction between the two zones forms a diode. The lateral edges of the diode are treated to remove defects to thereby inhibit current leakage around the edges of the lateral diode to lower the reverse current leakage of the diode.
    Type: Grant
    Filed: November 30, 1984
    Date of Patent: October 14, 1986
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Scott W. Wang, Mammen Thomas, Wen C. Ko