Patents by Inventor Scott Wayne Priddy
Scott Wayne Priddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210115588Abstract: Systems and methods for providing controllable substrate-to-source arrangements in a Molecular Beam Epitaxy (MBE) system to selectively adjust a distance, orientation, or other geometric configuration as between the source(s) and substrate(s) used in epitaxial growth systems are described herein. It has been found that by controllably adjusting height, crucible type and angle, and other processing conditions, that extremely high thickness uniformity can be accomplished in epitaxially grown wafers.Type: ApplicationFiled: October 19, 2020Publication date: April 22, 2021Inventors: Richard Charles Bresnahan, Scott Wayne Priddy, William Colbert Campbell, III, Mark Lee O'Steen, Stephen Gary Farrell
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Patent number: 10214806Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.Type: GrantFiled: June 25, 2014Date of Patent: February 26, 2019Assignee: VEECO INSTRUMENTS INC.Inventors: Eric Daniel Readinger, Rikki Scott LaBere, Richard Charles Bresnahan, Scott Wayne Priddy
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Patent number: 9187821Abstract: The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.Type: GrantFiled: August 11, 2009Date of Patent: November 17, 2015Assignee: Veeco Instruments Inc.Inventors: Scott Wayne Priddy, Richard Charles Bresnahan
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Patent number: 9062369Abstract: The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.Type: GrantFiled: March 24, 2010Date of Patent: June 23, 2015Assignee: Veeco Instruments, Inc.Inventors: Scott Wayne Priddy, Chad Michael Conroy
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Publication number: 20140373785Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.Type: ApplicationFiled: June 25, 2014Publication date: December 25, 2014Inventors: Eric Daniel Readinger, Rikki Scott LaBere, Richard Charles Bresnahan, Scott Wayne Priddy
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Patent number: 8871027Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.Type: GrantFiled: December 7, 2012Date of Patent: October 28, 2014Assignee: Veeco Instruments Inc.Inventor: Scott Wayne Priddy
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Patent number: 8328561Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source. In one embodiment, a set of power straps are each connected at one end to a power source feed-through wire and at the other end are urged by a pressure pin and a flat spring into electrical communication with one of the electrical contacts on the heating device.Type: GrantFiled: August 11, 2009Date of Patent: December 11, 2012Assignee: Veeco Instruments Inc.Inventor: Scott Wayne Priddy
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Publication number: 20120263569Abstract: A substrate holder for holding a semiconductor substrate for processing in a molecular beam epitaxy system, the substrate including a front side, an opposite backside for epitaxial growth, and an outer edge extending between the front side and the backside, the substrate holder including a body comprising a central opening extending from a backside to a top side of the body, an inner ring surrounding the central opening, and a substrate support lip extending from the inner ring into the central opening, and at least one tensioning device operatively attached to the body and including a cam member and a spring in contact with a portion of the cam member, wherein the spring has a elongated portion and at least two contact portions extending from opposite ends of the elongated portion for contacting the outer edge of the substrate.Type: ApplicationFiled: April 13, 2012Publication date: October 18, 2012Inventors: Scott Wayne Priddy, Richard Charles Bresnahan
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Patent number: 8192547Abstract: The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.Type: GrantFiled: September 24, 2007Date of Patent: June 5, 2012Assignee: Veeco Instruments Inc.Inventors: David William Gotthold, Richard Charles Bresnahan, Scott Wayne Priddy, Mark Lee O'Steen
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Publication number: 20100285218Abstract: A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.Type: ApplicationFiled: June 17, 2010Publication date: November 11, 2010Applicant: VEECO INSTRUMENTS INC.Inventors: Chad Conroy, Scott Wayne Priddy, Jacob A. Dahlstrom, Rich Bresnahan, David William Gotthold, John Patrin
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Publication number: 20100282167Abstract: A deposition source includes a crucible for containing deposition material and a body comprising a conductance channel. An input of the conductance channel is coupled to an output of the crucible. A heater heats the crucible so that the crucible evaporates the deposition material into the conductance channel. A heat shield comprising a plurality of heat resistant material layers is positioned around at least one of the heater and the body. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.Type: ApplicationFiled: June 17, 2010Publication date: November 11, 2010Applicant: VEECO INSTRUMENTS INC.Inventors: Chad Conroy, Scott Wayne Priddy, Jacob A. Dahlstrom, Rich Bresnahan, David William Gotthold, John Patrin
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Publication number: 20100248416Abstract: The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.Type: ApplicationFiled: March 24, 2010Publication date: September 30, 2010Inventors: Scott Wayne Priddy, Chad Michael Conroy
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Publication number: 20100159132Abstract: A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.Type: ApplicationFiled: November 30, 2009Publication date: June 24, 2010Applicant: VEECO INSTRUMENTS, INC.Inventors: Chad Conroy, Scott Wayne Priddy, Jacob Allan Dahlstrom, Richard Charles Bresnahan, David William Gotthold, John Charles Patrin
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Publication number: 20100154710Abstract: Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.Type: ApplicationFiled: December 16, 2009Publication date: June 24, 2010Inventors: Scott Wayne Priddy, Chad Michael Conroy
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Publication number: 20100031888Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.Type: ApplicationFiled: August 11, 2009Publication date: February 11, 2010Inventor: Scott Wayne Priddy
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Publication number: 20100031878Abstract: The present invention provides deposition sources that can efficiently and controllably provide vaporized material for deposition of thin film materials. Deposition sources described herein can be used to deposit any desired material and are particularly useful for depositing high melting point materials at high evaporation rates. An exemplary application for deposition sources of the present invention is deposition of copper, indium, and gallium in the manufacture of copper indium gallium diselenide based photovoltaic devices.Type: ApplicationFiled: August 11, 2009Publication date: February 11, 2010Inventors: Scott Wayne Priddy, Richard Charles Bresnahan
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Publication number: 20080173241Abstract: Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.Type: ApplicationFiled: December 17, 2007Publication date: July 24, 2008Inventors: Scott Wayne Priddy, Richard Charles Bresnahan, Chad Michael Conroy
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Publication number: 20080134975Abstract: The present invention relates to vacuum depositions systems and related deposition methods. Vacuum deposition systems that use one or more cyropanels for localized pumping of a deposition region where a substrate is positioned are provided. The present invention is particularly applicable to pumping and minimizing reevaporation of high vapor pressure deposition materials during molecular beam epitaxy.Type: ApplicationFiled: September 24, 2007Publication date: June 12, 2008Inventors: David William Gotthold, Richard Charles Bresnahan, Scott Wayne Priddy, Mark Lee O'Steen
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Patent number: 6718775Abstract: An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability. In one embodiment, used in molecular beam epitaxy (MBE), the cryopanel is divided into first and second cooling chambers.Type: GrantFiled: July 30, 2002Date of Patent: April 13, 2004Assignee: Applied EPI, Inc.Inventors: Paul E. Colombo, Scott Wayne Priddy
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Publication number: 20040020219Abstract: An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability. In one embodiment, used in molecular beam epitaxy (MBE), the cryopanel is divided into first and second cooling chambers.Type: ApplicationFiled: July 30, 2002Publication date: February 5, 2004Applicant: Applied EPI, Inc.Inventors: Paul E. Colombo, Scott Wayne Priddy