Patents by Inventor SCOTT WILSON BARRY

SCOTT WILSON BARRY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8487405
    Abstract: A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: July 16, 2013
    Assignee: Maxim Integrated Products, Inc.
    Inventors: Lei Tian, Scott Wilson Barry, Xuejun Ying
  • Publication number: 20120211865
    Abstract: A high density deep trench MIM capacitor structure is provided wherein conductive-compressive-conformally applied layers of a semiconductor material, such as a Poly-SixGe1-x, are interleaved within MIM capacitor layers to counterbalance the tensile stresses created by such MIM capacitor layers. The interleaving of conductive-compressive-conformally applied material layers are adapted to counterbalance convex (upward) bowing of silicon wafers during the manufacturing process of high density deep trench MIM capacitor silicon devices to thereby help maximize production yields of such devices per wafer.
    Type: Application
    Filed: February 17, 2011
    Publication date: August 23, 2012
    Applicant: MAXIM INTEGRATED PRODUCTS, INC.
    Inventors: LEI TIAN, SCOTT WILSON BARRY, XUEJUN YING