Abstract: A method for forming an element isolation insulating film of semiconductor devices, by which junction leakage current can be greatly reduced, comprising the steps of: forming a pad oxide film and a first insulating film on a semiconductor substrate, in sequence; patterning the pad oxide film and the first insulating film to expose an inactive region of the semiconductor device; constructing a spacer with a second insulating film at the side wall of the patterned first insulating film; etching the semiconductor substrate at a certain depth, to form a trench, the patterned first insulating film and the second insulating film spacer serving as a mask; implanting germanium impurities in the trench at a predetermined dose under a predetermined energy, to form an amorphous region to remove the lattice defective occurring upon forming the trench, the patterned first insulating film and the second insulating film spacer serving as a mask; crystallizing the amorphous region by a solid phase epitaxy process; and constr

Abstract: A method for forming a field oxide film in a semiconductor device, wherein the field oxide film is integral with a nitride film disposed on an active region, thereby preventing spacers formed from being easily spread on the upper surface of the nitride film disposed on the active region even though they are subjected to a force from the field oxide film in oxidation of a silicon substrate. This structure also inhibits lateral diffusion of oxygen and thereby reduces the length of bird's beak formed. The method also enables accurate formation of a required dimension of spacers so that the dimension of bird's beak formed can be minimized. Also the method of the present invention solves the problem of a nitride film loss upon forming the spacers and enables an accurate adjustment of a trench depth. Accordingly, it is possible to form a field oxide film exhibiting a good element isolation characteristic required in a highly integrated semiconductor device.

Abstract: There are disclosed methods for the formation of field oxide film in a semiconductor device. By the methods, a field oxide film which plays a role of insulation for the separation of device, is formed in a trench formed in a semiconductor substrate. In the methods, an oxide-nitride film is utilized as an oxidation protective film which prevents a pad oxide film and the side well of the trench from being oxidized. As a result, the bird's beak is reduced, which allows to secure the active region more large. In addition, the methods make the field oxide film smooth. Furthermore, increasing the threshold voltage of a field, the field oxide film is superior in punchthrough characteristics. Accordingly, the methods can be applied to fabricate highly integrated semiconductor devices.

Abstract: Methods for the construction of field oxide film is disclosed. The methods facilitates the control of the length and thickness of L-shaped spacer, overcoming some difficulties in processing a semiconductor device. Thus, the stresses and defects of semiconductor substrate can be greatly diminished. In addition, the methods bring about an effect of easily achieving the separation process of semiconductor device, an essential process. Superior in suppressing Bird's beak, the methods are capable of securing more large active region in a semiconductor device.

Abstract: A method for forming a field oxide film of a semiconductor device capable of minimizing the size of bird's beak and avoiding an occurrence of crystal defect at a semiconductor substrate.