Abstract: A computing device may search for a plurality of first physical addresses that are start physical addresses corresponding to a plurality of first virtual addresses from a page table based on a first start virtual address that is a start address of a virtual address space including the plurality of first virtual addresses corresponding to a plurality of first pages for a first storage device, and transmit a first access request for at least one first physical address of the plurality of first physical addresses to the first storage device using a first storage controller.

Abstract: A cathode material comprises bimetal-doped barium cobaltite-based perovskite and a bi-directional protonic ceramic fuel cell comprising the same. In a cathode material according to an embodiment, barium cobaltite is doped with scandium (Sc) and tantalum (Ta), and the cathode material is represented by the following Formula 1: BaScxTa0.2?xCo0.8O3????[Formula 1] where X is 0.001<X<0.199, ? is 0<?<2.

Abstract: A memory system may include a storage medium, a first cache, a second cache, and a control unit suitable for preferentially or selectively storing, in the first cache, write data corresponding to a write request received from a host device and preferentially or selectively checking the second cache in response to a read request received from the host device.

Abstract: An internal voltage trimming device and a semiconductor integrated circuit including the same are provided. The internal voltage trimming device includes a voltage dividing circuit configured to generate a feedback voltage based on a resistance of the voltage dividing circuit and a target voltage that is received in a trimming mode, and a comparator configured to compare a reference voltage and the feedback voltage to generate a comparison signal. The internal voltage trimming device further includes a direct current to direct current (DC-DC) converter configured to generate an internal voltage based on an input voltage and the comparison signal, and be disabled in the trimming mode, and an automatic trimming circuit configured to generate, in the trimming mode, a trimming signal based on the comparison signal. The voltage dividing circuit is further configured to adjust the resistance based on the trimming signal.

Abstract: An internal voltage trimming device and a semiconductor integrated circuit including the same are provided. The internal voltage trimming device includes a voltage dividing circuit configured to generate a feedback voltage based on a resistance of the voltage dividing circuit and a target voltage that is received in a trimming mode, and a comparator configured to compare a reference voltage and the feedback voltage to generate a comparison signal. The internal voltage trimming device further includes a direct current to direct current (DC-DC) converter configured to generate an internal voltage based on an input voltage and the comparison signal, and be disabled in the trimming mode, and an automatic trimming circuit configured to generate, in the trimming mode, a trimming signal based on the comparison signal. The voltage dividing circuit is further configured to adjust the resistance based on the trimming signal.