Abstract: The present invention relates to: a negative electrode active material including silicon-based composite particles containing SiOx (0<x<2) and a MgSiO3 phase, wherein the MgSiO3 phase includes a first MgSiO3 phase having an enstatite structure and a second MgSiO3 phase having a clinoenstatite structure at a weight ratio of 1:1 to 1:5; a negative electrode including the same; and a secondary battery including the negative electrode.

Abstract: In a method for treating a cancer expressing secreted protein acidic and rich in cysteine (SPARC), a composition including an albumin and at least one cysteine bound thereto is administered to a subject in need thereof. The cancer expressing the SPARC may be at least one selected from the group consisting of a brain tumor, melanoma, breast cancer, rectal cancer and stomach cancer.

Abstract: Disclosed is a radar antenna including an antenna body including a first plate and a second plate; a slot radiation part and a slot reception part formed in the first plate; a transmission port and a reception port formed in the second plate; and a waveguide formed by assembling the first and second plates. The slot radiation part includes a first slot radiation part configured to radiate a radio wave in a first detection range, and a second slot radiation part configured to radiate radio waves in a second detection range having a larger width and distance than the first detection range.

Abstract: The present invention relates to a heteroaryl derivative compound and a use thereof. Since the heteroaryl derivative of the present invention exhibits excellent inhibitory activity against EGFR, the heteroaryl derivative can be usefully used as a therapeutic agent for EGFR-associated diseases.

Abstract: The present invention provides a method for fabricating nano material pattern comprising the steps of forming a perfluorinated polymer pattern on top of the substrate (step 1); spreading a dispersion containing the dispersed nano material on the substrate patterned in step 1) (step 2); and eliminating the perfluorinated polymer pattern formed on the substrate of step 2) (step 3). The method for fabricating nano material pattern of the present invention has advantages over the conventional lift-off method for the fabrication of nano material pattern, which are easiness in eliminating the perfluorinated polymer pattern after forming the nano material pattern with it and no chance of damaging the substrate, suggesting that the method of the invention is excellent in fabricating an excellent nano material pattern.

Abstract: The present invention provides a method for fabricating nano material pattern comprising the steps of forming a perfluorinated polymer pattern on top of the substrate (step 1); spreading a dispersion containing the dispersed nano material on the substrate patterned in step 1) (step 2); and eliminating the perfluorinated polymer pattern formed on the substrate of step 2) (step 3). The method for fabricating nano material pattern of the present invention has advantages over the conventional lift-off method for the fabrication of nano material pattern, which are easiness in eliminating the perfluorinated polymer pattern after forming the nano material pattern with it and no chance of damaging the substrate, suggesting that the method of the invention is excellent in fabricating an excellent nano material pattern.

Abstract: An enhanced inductively coupled plasma reactor which comprises; a chamber; a power supply for providing radio-frequencies necessary to generate plasma within the chamber; an antenna for producing electric fields and magnetic fields with a radio-frequency power from the power supply to generate plasma within the chamber; Helmholtz coils for shaking the plasma with intermittent modulation of a weak magnetic field to increase the density of the plasma and decrease the electron temperature and enhance the uniformity of the plasma, the Helmholtz coils consisting of two coils which are symmetrically arranged with a common axis, winding around the chamber at an upper position and a lower position, respectively, the weak magnetic field being produced by providing a combination of a direct current and an alternating current to the Helmholtz coils; a wafer stage and support; a bias RF power supply for controlling ion energies, connected to the wafer stage; and a matching box for optimally controlling and transferring t