Patents by Inventor Se-gi Yu
Se-gi Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8044581Abstract: An inorganic field emission device includes a first electrode, a second electrode spaced apart from the first electrode, and a light emitting layer disposed therebetween. A dielectric layer is disposed between the first electrode and the light emitting layer and/or between the second electrode and the light emitting layer. A field reinforcing layer is disposed between a dielectric layer and the light emitting layer and includes carbon nanotubes having a length of about 20 nanometers to about 1 micrometer.Type: GrantFiled: October 19, 2009Date of Patent: October 25, 2011Assignees: Samsung Electronics Co., Ltd., Hankuk University of Foreign Studies Research and Industry-University Cooperation FoundationInventors: Shang-hyeun Park, Se-gi Yu, Jin-Young Kim, Min-jong Bae, Tae-won Jeong
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Patent number: 7824936Abstract: Disclosed herein is a method of preparing a low resistance metal line, is a method of manufacturing a dispersion type AC inorganic electroluminescent device and a dispersion type AC inorganic electroluminescent device manufactured thereby, in which a light-emitting layer and a dielectric layer between a lower electrode and an upper electrode are simultaneously formed through a single process using spin coating, thereby simplifying the overall manufacturing process and decreasing the manufacturing cost, and furthermore, the contact interface between the light-emitting layer and the dielectric layer is increased, therefore increasing the brightness of the device.Type: GrantFiled: January 18, 2008Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Shang Hyeun Park, Tae Won Jeong, Se Gi Yu, Min Jong Bae
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Publication number: 20100270918Abstract: An inorganic field emission device includes a first electrode, a second electrode spaced apart from the first electrode, and a light emitting layer disposed therebetween. A dielectric layer is disposed between the first electrode and the light emitting layer and/or between the second electrode and the light emitting layer. A field reinforcing layer is disposed between a dielectric layer and the light emitting layer and includes carbon nanotubes having a length of about 20 nanometers to about 1 micrometer.Type: ApplicationFiled: October 19, 2009Publication date: October 28, 2010Applicants: SAMSUNG ELECTRONICS CO., LTD., Hankuk University of Foreign Studies Research and Industry-University Cooperation FoundationInventors: Shang-hyeun PARK, Se-gi YU, Jin-Young KIM, Min-jong BAE, Tae-won JEONG
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Publication number: 20090023233Abstract: Disclosed herein is a method of preparing a low resistance metal line, is a method of manufacturing a dispersion type AC inorganic electroluminescent device and a dispersion type AC inorganic electroluminescent device manufactured thereby, in which a light-emitting layer and a dielectric layer between a lower electrode and an upper electrode are simultaneously formed through a single process using spin coating, thereby simplifying the overall manufacturing process and decreasing the manufacturing cost, and furthermore, the contact interface between the light-emitting layer and the dielectric layer is increased, therefore increasing the brightness of the device.Type: ApplicationFiled: January 18, 2008Publication date: January 22, 2009Applicants: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANKUK UNIVERSITY OF FOREIGN STUDIESInventors: Shang Hyeun PARK, Tae Won JEONG, Se Gi YU, Min Jong BAE
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Patent number: 7078007Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.Type: GrantFiled: January 30, 2003Date of Patent: July 18, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Se-gi Yu, Whi-kun Yi, Jeong-hee Lee, Yong-wan Jin, Tae-won Jeong
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Patent number: 7025652Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.Type: GrantFiled: February 4, 2005Date of Patent: April 11, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-na Heo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Tae-won Jeong, Chang-soo Lee
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Publication number: 20050200254Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.Type: ApplicationFiled: February 4, 2005Publication date: September 15, 2005Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-na Heo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Tae-won Jeong, Chang-soo Lee
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Patent number: 6903500Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.Type: GrantFiled: January 8, 2003Date of Patent: June 7, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-won Jeong, Ji-beom Yoo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Chang-soo Lee, Jung-na Heo
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Patent number: 6870308Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.Type: GrantFiled: February 20, 2003Date of Patent: March 22, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-na Heo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Tae-won Jeong, Chang-soo Lee
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Publication number: 20030173884Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.Type: ApplicationFiled: February 20, 2003Publication date: September 18, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-na Heo, Whi-kun Yi, Jeong-hee Lee, Se-gi Yu, Tae-won Jeong, Chang-soo Lee
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Publication number: 20030141179Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.Type: ApplicationFiled: January 30, 2003Publication date: July 31, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Se-Gi Yu, Whi-Kun Yi, Jeong-Hee Lee, Yong-Wan Jin, Tae-Won Jeong
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Publication number: 20030127960Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.Type: ApplicationFiled: January 8, 2003Publication date: July 10, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Tae-Won Jeong, Ji-Beom Yoo, Whi-Kun Yi, Jeong-Hee Lee, Se-Gi Yu, Chang-Soo Lee, Jung-Na Heo
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Patent number: 6346775Abstract: A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF2, CaF2 or LiF, or a film of an oxide such as Al2O3, ZnO, CaO, SrO, SiO2 or La2O3 on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.Type: GrantFiled: May 1, 2000Date of Patent: February 12, 2002Assignee: Samsung SDI Co., Ltd.Inventors: Won-tae Lee, Wong-bong Choi, In-taek Han, Jeong-hee Lee, Se-gi Yu