Patents by Inventor Se-Hyoung Ahn
Se-Hyoung Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961413Abstract: The present invention relates to a method, system and non-transitory computer-readable recording medium for assisting listening study. According to one aspect of the invention, there is provided a method for assisting listening study, comprising the steps of: determining a plurality of weak study sentences that a user who is provided with assessment study sentences by speech fails to understand, with reference to feedback from the user; determining at least some of pronunciations or pronunciation combinations commonly included in the plurality of weak study sentences as weak pronunciations or pronunciation combinations that the user fails to understand; and determining a compensatory study course to be provided to the user, with reference to the determined weak pronunciations or pronunciation combinations.Type: GrantFiled: October 23, 2019Date of Patent: April 16, 2024Assignee: VITRUV INC.Inventors: Se Hoon Gihm, Myung Hoon Ahn, Tae Hyoung Oh, Du Seop Jung
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Publication number: 20230292496Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.Type: ApplicationFiled: May 17, 2023Publication date: September 14, 2023Inventors: CHANG MU AN, SANG YEOL KANG, YOUNG-LIM PARK, JONG-BOM SEO, SE HYOUNG AHN
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Patent number: 11711915Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.Type: GrantFiled: January 7, 2022Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
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Patent number: 11600621Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: GrantFiled: August 26, 2021Date of Patent: March 7, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Younsoo Kim, Young-lim Park, Jeong-Gyu Song, Se Hyoung Ahn, Changmu An
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Patent number: 11527604Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: GrantFiled: June 9, 2021Date of Patent: December 13, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
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Patent number: 11488958Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.Type: GrantFiled: June 30, 2020Date of Patent: November 1, 2022Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
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Publication number: 20220130835Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.Type: ApplicationFiled: January 7, 2022Publication date: April 28, 2022Inventors: CHANG MU AN, SANG YEOL KANG, YOUNG-LIM PARK, JONG-BOM SEO, SE HYOUNG AHN
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Patent number: 11244946Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.Type: GrantFiled: June 24, 2020Date of Patent: February 8, 2022Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
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Publication number: 20210391333Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: ApplicationFiled: August 26, 2021Publication date: December 16, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyooho JUNG, Younsoo KIM, Young-Lim PARK, Jeong-Gyu SONG, Se Hyoung AHN, Changmu AN
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Patent number: 11177263Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: March 23, 2020Date of Patent: November 16, 2021Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Patent number: 11133314Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: GrantFiled: June 10, 2020Date of Patent: September 28, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kyooho Jung, Younsoo Kim, Young-lim Park, Jeong-Gyu Song, Se Hyoung Ahn, Changmu An
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Publication number: 20210296429Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: ApplicationFiled: June 9, 2021Publication date: September 23, 2021Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
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Patent number: 11069768Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: GrantFiled: February 4, 2020Date of Patent: July 20, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
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Publication number: 20210134804Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.Type: ApplicationFiled: June 10, 2020Publication date: May 6, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyooho JUNG, Younsoo KIM, Young-lim PARK, Jeong-Gyu SONG, Se Hyoung AHN, Changmu AN
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Publication number: 20210125993Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.Type: ApplicationFiled: June 30, 2020Publication date: April 29, 2021Inventors: Chang Mu An, Sang Yeol Kang, Young-Lim Park, Jong-Bom Seo, Se Hyoung Ahn
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Publication number: 20210125996Abstract: Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.Type: ApplicationFiled: June 24, 2020Publication date: April 29, 2021Inventors: CHANG MU AN, SANG YEOL KANG, YOUNG-LIM PARK, JONG-BOM SEO, SE HYOUNG AHN
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Publication number: 20200403062Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: ApplicationFiled: February 4, 2020Publication date: December 24, 2020Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
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Publication number: 20200243531Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: March 23, 2020Publication date: July 30, 2020Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Patent number: 10636795Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: GrantFiled: May 15, 2019Date of Patent: April 28, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee
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Publication number: 20190267384Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.Type: ApplicationFiled: May 15, 2019Publication date: August 29, 2019Inventors: Se-hyoung Ahn, Youn-soo Kim, Jae-hyoung Choi, Jae-wan Chang, Sun-min Moon, Jin-sun Lee