Abstract: A memory device, and a method of operating the memory device, includes a memory block in which a plurality of cell pages are coupled to each of word lines. The memory device also includes a peripheral circuit configured to adjust a time point at which a verify voltage is applied to a selected word line among the word lines according to an order of performing a program operation during a verify operation of a selected cell page. The memory device further includes a control logic circuit configured to transmit, to the peripheral circuit, an operation code for adjusting a time point at which the verify voltage is output.

Abstract: Provided are an electromagnetic wave absorber having a multi-layered structure absorbing an electromagnetic wave, particularly, a terahertz wave, and a method of fabricating the electromagnetic wave absorber. The electromagnetic wave absorber includes a substrate having a predetermined refractive index for an electromagnetic wave, and a plurality of glass spheres arrayed into at least one layer on an upper part of the substrate.

Abstract: Provided is an apparatus and a method for testing an electrical fuse. In accordance therewith: a first test is performed on a plurality of memory cells arranged with a plurality of rows and a plurality of columns; a line related to a defective cell is repaired with a redundant line by using an electrical fuse; data outputted from the redundant line is set with a predetermined value; performing a second test on the plurality of memory cells; and a determination is made of whether or not data outputted from the line related to a defective cell has the predetermined value.