Abstract: An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.

Abstract: A flexible gimbal joint for pipes including an internal flexible seal interconnecting the pipes and an external gimbal ring which also provides secondary sealing. The joint includes spherical portions with mating sinusoidal free edges, the external ring and four trunnion pins, each pin coupled to the ring, two pins pivotally coupled to the first spherical portion and two other pins pivotally coupled to the second spherical portion. The inner surface of the ring is formed substantially as a spherical portion and has a diameter slightly greater than the outer surfaces of the first and second spherical portions. The ring surrounds these spherical portions, covering the gap between them, and thus acts as a secondary seal, while protecting the main internal seal. All axial loads on the joint are assumed by the spherical portions, the external ring and the trunnion pins, so the joint is easily flexed.