Abstract: Disclosed is a method for fabricating a transistor of a memory device capable of preventing voids from being created when forming a low-resistant gate electrode. The method includes the steps of forming an active area by etching a semiconductor substrate, forming a field oxide layer in the semiconductor substrate and forming a recess by etching the field oxide layer. A gate insulation layer is formed along an upper surface of the active area and an exposed portion of the active area. A gate electrode is formed on the field oxide layer such that the gate electrode extends across an upper portion of the active area while being overlapped with a channel area and the recess. The first conductive layer to be patterned has the same thickness, so the low-resistant gate electrode is easily fabricated without forming the voids.

Abstract: A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.

Abstract: Disclosed herein is a method for manufacturing a transistor in a semiconductor device, which can improve the refresh characteristics of the device.