Abstract: An X-ray imaging apparatus includes an imaging device configured to capture a camera image of a target; a controller configured to stitch a plurality of X-ray images of respective divided regions of the target to generate one X-ray image of the target; and a display configured to display a settings window that provides a GUI for receiving a setting of an X-ray irradiation condition for the respective divided regions, and display the camera image in which positions of the respective divided regions are displayed.

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.

Abstract: A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.

Abstract: A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.

Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Abstract: A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.

Abstract: A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract: A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.

Abstract: A solar cell module is provided. The solar cell module includes: a substrate; a plurality of unit cells including a first electrode, a semiconductor layer, and a second electrode that are sequentially deposited on the substrate; a first sub-module and a second sub-module having the unit cells, respectively; a first longitudinal pattern dividing the unit cells of the first sub-module, and a second longitudinal pattern dividing the unit cells of the second sub-module; a transverse pattern dividing the first sub-module and the second sub-module; and an insulating portion disposed near the transverse pattern, and insulating between the first sub-module and the second sub-module, wherein the unit cells of the first sub-module are connected in series through the first longitudinal pattern, the unit cells of the second sub-module are connected in series through the second longitudinal pattern, and the first sub-module and the second sub-module are connected in series through the transverse pattern.

Abstract: A liquid crystal display and a simple method to fabricate the same are provided, which can accurately measure luminance of an external light. The liquid crystal display includes a substrate; a thin film transistor array formed on the substrate; and a photoelectric conversion element having a reflection pattern formed on at least one side of the substrate, a photoelectric conversion region provided with a first semiconductor region formed on an upper part of the reflection pattern to receive an external light reflected by the reflection pattern, and a dummy pattern formed on an upper part of the photoelectric conversion region with a width corresponding to the first semiconductor region. The photoelectric conversion region may be configured to adjust the quantity of light incident to the thin film transistor array.

Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

Abstract: A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract: A method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film.

Abstract: Provided are a method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film.

Abstract: A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.

Abstract: A method of crystallizing polysilicon, a method of fabricating a thin film transistor using the same, and a method of fabricating a liquid crystal display thereof form a polysilicon layer having uniformly oriented crystalline grains with high quality. A polysilicon crystallizing method includes forming a polysilicon layer on a substrate, making grains of the polysilicon layer amorphous except a portion of the grains having specific orientation, and crystallizing the polysilicon layer using the grains having the specific orientation.