Abstract: A display device includes a first semiconductor layer disposed on a substrate; a first insulating layer disposed on the first semiconductor layer; a scan line disposed on the first insulating layer; a second insulating layer on the scan line; an inverted scan line on the second insulating layer; a third insulating layer disposed on the inverted scan line; a second semiconductor layer disposed on the third insulating layer; a fourth insulating layer disposed on the second semiconductor layer; an initializing voltage line disposed on the fourth insulating layer and overlapping the scan line; a first transistor including a channel disposed in the first semiconductor layer and receiving a gate signal through the scan line; and a second transistor including a channel disposed in the second semiconductor layer and receiving a gate signal through the inverted scan line.

Abstract: Disclosed is a device for supplying slurry for semiconductor in a polishing process when the semiconductor is manufactured. The slurry supply apparatus includes: a storage tank in which the slurry is stored; a plurality of pressure vessels connected to the storage tank, respectively, for receiving the slurry from the storage tank and discharging the slurry to the outside; an aspiration unit connected to the pressure vessels, for generating a vacuum pressure in the pressure vessels; and a centrifugal separation unit installed in a connection line of the aspiration unit between the pressure vessels and the aspiration unit, for separating foreign substances contained in the introduced compressed air from the compressed air by using a centrifugal force.

Abstract: Disclosed is an apparatus for supplying slurry for semiconductor, including a filter which filters slurry particles larger than a predetermined particle size; an air injector which is connected with the filter so as to back-wash the filter using compressed air injected into the filter; a slurry collecting tank which is connected with the filter so as to store the slurry filtered by the filter; and a disintegrator which is connected with the slurry collecting tank so as to crush the filtered slurry.

Abstract: The invention concerns an apparatus for cleaning the edge of a wafer that may be relatively simply constructed with low cost, and prevent the wafer from being re-contaminated by the edge cleaning, thus resulting in increase of the yield rate of wafers. The apparatus includes a cleaning agent ejection nozzle body provided on a side part of a chuck for ejecting a particulate cleaning agent (CO2 particles) towards the side and the edge portions of the wafer held and rotated by the chuck, and a nozzle body carriage for moving the nozzle body between rest and cleaning positions.

Abstract: Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.

Abstract: Disclosed is a nozzle for injecting sublimable solid particles, which is capable of minimizing consumption of the carrier gas and also maximizing cleaning efficiency. The nozzle comprises a base block having a space in which carrier gas is supplied through a gas supplying pipe; a sub-block having a space in which cleaning medium decompressed by a regulator is supplied through a cleaning medium supplying pipe; a first venturi block having a venturi path for adiabatically expanding the carrier gas supplied from the space of the base block, and a cleaning medium injection path communicating the venturi path and the space of the sub-block and the carrier gas passed through the venturi path; and a second venturi block having a venturi path for adiabatically expanding the mixed gas of the carrier gas and the cleaning medium.

Abstract: The invention concerns an apparatus for cleaning the edge of a wafer that may be relatively simply constructed with low cost, and prevent the wafer from being re-contaminated by the edge cleaning, thus resulting in increase of the yield rate of wafers. The apparatus includes a cleaning agent ejection nozzle body provided on a side part of a chuck for ejecting a particulate cleaning agent (CO2 particles) towards the side and the edge portions of the wafer held and rotated by the chuck, and a nozzle body carriage for moving the nozzle body between rest and cleaning positions.

Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer.

Abstract: A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Abstract: A method of stripping a nitride layer from a wafer includes the steps of putting the wafer into a process bath containing a stripping solution, passing the stripping solution from the process bath through a filter to remove the nitride particles contained therein, heating the filtered stripping solution through an in-line electrical heater with two heating parts connected in parallel to allow the stripping solution to quickly return to the proper etching temperature, and returning the temperature recovered stripping solution to the process bath. The filtered stripping solution is branched through the parallel heating parts to enable it to be quickly heated. The stripping solution may be a phosphoric acid solution, whose proper etching temperature is about 163.degree. C. The in-line heater consists of at least two heating parts connected in parallel, each with an electrical capacity of 6 KW.

Abstract: A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.