Abstract: A method of enhancing tolerance to drought stress in a plant includes inhibiting expression of a gene encoding a protein having the amino acid sequence of SEQ ID NO: 2 or genes encoding BCAT1 protein and BCAT2 protein from soybean having the amino acid sequence of SEQ ID NO: 32 and SEQ ID NO: 34, respectively in a plant cell.

Abstract: A NF-YA5/miR169a module controls nitrogen utilization efficiency of plant and uses thereof. Since the NF-YA5/miR169a module enables the enhancement of the nitrogen utilization efficiency in plants, it can be advantageously used for the development of environmentally friendly and cost-effective plants that can reduce the consumption of nitrogen fertilizers while maintaining crop yields.

Abstract: A method of controlling tolerance to drought stress in a plant includes regulating expression of a gene encoding Oryza sativa branched-chain amino acid aminotransferase 2 (OsBCAT2) protein derived from rice in a plant cell. A genome-edited rice plant having enhanced tolerance to drought stress is prepared by carrying out genome editing by introducing guide RNA specific to target nucleotide sequence in a gene encoding OsBCAT2 protein, and endonuclease protein to a rice plant cell, and regenerating a plant from the genome-edited rice plant cell.

Abstract: The present invention concerns a method for enhancing yield-related traits in plants by modulating expression of a particular type of NAC transcription factor, an AP2-2 polypeptide, or an APETELA2-70-like (AP2-70-like) polypeptide in plants. The particular type of NAC transcription factor is one having an amino acid sequence, which when used in the construction of a NAC phylogenetic tree, tends to cluster with the group of NACs comprising the amino acid sequence represented by SEQ ID NO: 2, 51, 53, 55, 57 or 59 rather than with any other NAC group. The present invention also concerns plants having modulated expression of a nucleic acid encoding such a NAC transcription factor, AP2-2 polypeptide, or AP2-70-like polypeptide, which plants have enhanced yield-related traits relative to control plants. The invention also provides hitherto unknown NAC, AP2-2 and AP2-70-like-encoding nucleic acids, and constructs comprising the same, useful in performing the methods of the invention.

Abstract: The present invention concerns a method for enhancing yield-related traits in plants by modulating expression of a particular type of NAC transcription factor in plants. The particular type of NAC transcription factor is one having an amino acid sequence, which when used in the construction of a NAC phylogenetic tree, tends to cluster with the group of NACs comprising the amino acid sequence represented by SEQ ID NO: 2, SEQ ID NO: 51, SEQ ID NO: 53, SEQ ID NO: 55, SEQ ID NO: 57 or SEQ ID NO: 59 rather than with any other NAC group. The present invention also concerns plants having modulated expression of a nucleic acid encoding such a NAC transcription factor, which plants have enhanced yield-related relative to control plants. The present invention further concerns a method for enhancing yield-related traits in plants by modulating expression in a plant of a nucleic acid encoding an AP2-2 polypeptide.

Abstract: Methods of forming integrated circuit memory devices include the steps of forming a first electrically insulating layer on a semiconductor substrate containing memory cells in a memory cell array region and peripheral circuits for driving the memory cells in a peripheral circuit region adjacent the memory cell array region. An etch-stopping layer is then formed on the first electrically insulating layer and then steps are performed to form a first electrically conductive layer on the etch-stopping layer, form a ferroelectric layer on the first electrically conductive layer, form a second electrode layer on the ferroelectric layer, etch the second electrode layer and ferroelectric layer in sequence using a first mask to define a second electrode and then etch the first electrically conductive layer using a second mask to simultaneously define a first electrode and a first interconnection layer comprising the same material.