Abstract: An apparatus of producing a carbonate mineral includes a first reaction device including a fluid path along which an ion exchange solution moves; a cation exchange medium disposed in the fluid path, the cation exchange medium containing an alkaline earth metal; a second reaction device accommodating a sodium hydroxide aqueous solution and receiving the ion exchange solution containing an alkaline earth metal ion from the first reaction device; and a carbon dioxide supplying device supplying a carbon dioxide to the second aqueous solution.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: Provided is a portable ultraviolet device for exploring a mineral resource. The portable ultraviolet device for exploring the mineral resource may include a body, a visible component, an ultraviolet lamp assembly, and a darkroom component. The visible component is coupled to the body to pass through the body so that a mineral resource disposed at a lower portion of the body is observed from an upper side of the body. The ultraviolet lamp assembly part is coupled to the body to emit ultraviolet rays onto the mineral resource. The darkroom component is coupled to a bottom surface of the body to surround the visible component and the ultraviolet lamp assembly and defines an external light blocking space having an openable inlet in a lower portion of the body.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.

Abstract: A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film.

Abstract: The present invention relates to a method and system for constructing a database for a product demand/supply connection network of a technology market connection and analysis apparatus comprising a microprocessor for controlling the construction of a database for implementing a product demand/supply connection network, and further comprising the database for a product demand/supply connection network, in which information relating to the database generated in accordance with the control of the microprocessor is stored.

Abstract: Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: Disclosed is a method for preparing rod-like silica fine particles including carbon, the method including: a first step of preparing a mixed solvent by mixing a surfactant with alcohol, and then preparing a mixed solution by adding water, ethanol, ammonia water and a salt to the mixed solvent; a second step of forming rod-like silica fine particles by adding a silica precursor to the mixed solution; and a third step of carbonizing the rod-like silica fine particles, and through a sol-gel reaction of the silica precursor and a carbonization process thereof.

Abstract: An apparatus of producing a carbonate mineral includes a first reaction device including a fluid path along which an ion exchange solution moves; a cation exchange medium disposed in the fluid path, the cation exchange medium containing an alkaline earth metal; a second reaction device accommodating a sodium hydroxide aqueous solution and receiving the ion exchange solution containing an alkaline earth metal ion from the first reaction device; and a carbon dioxide supplying device supplying a carbon dioxide to the second aqueous solution.

Abstract: In a method of producing carbonate mineral, a first aqueous solution containing an alkaline earth metal ion extracted from a cation exchange medium by a cation exchange reaction and carbon dioxide are added to a second aqueous solution to form a carbonate mineral.

Abstract: Provided is a portable ultraviolet device for exploring a mineral resource. The portable ultraviolet device for exploring the mineral resource may include a body, a visible component, an ultraviolet lamp assembly, and a darkroom component. The visible component is coupled to the body to pass through the body so that a mineral resource disposed at a lower portion of the body is observed from an upper side of the body. The ultraviolet lamp assembly part is coupled to the body to emit ultraviolet rays onto the mineral resource. The darkroom component is coupled to a bottom surface of the body to surround the visible component and the ultraviolet lamp assembly and defines an external light blocking space having an openable inlet in a lower portion of the body.

Abstract: Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

Abstract: In a method of producing carbonate mineral, a first aqueous solution containing an alkaline earth metal ion extracted from a cation exchange medium by a cation exchange reaction and carbon dioxide are added to a second aqueous solution to form a carbonate mineral.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.