Abstract: Disclosed herein is a megasonic cleaning module. The megasonic cleaning module includes a vibrator having a piezoelectric element mounted therein for generating ultrasonic waves by the vibration of the piezoelectric element, a first vibratory rod having a diameter gradually decreased to concentrate the longitudinal ultrasonic waves generated from the vibrator, and a second vibratory rod for progressing the longitudinal ultrasonic waves, generated from the first vibratory rod, in the transverse direction. The size of the second vibratory rod at one side thereof where the second vibratory rod is coupled to the first vibratory rod is less than that of the second vibratory rod at the other side thereof, with the result that the longitudinal ultrasonic waves are not prevented from affecting the wafer.

Abstract: The liquid crystal display device is for recognizing a variation in liquid crystal capacitance according to a touch to be capable of sensing whether or not the device is touched and the position of a touched region and includes a first substrate and a second substrate being opposite to each other; a plurality of gate lines and a plurality of data lines crossing each other on the first substrate to define pixel regions; pixel transistors respectively disposed at the intersections of the plurality of gate lines and the plurality of data lines, and pixel electrodes respectively disposed in the pixel regions; a common electrode disposed on the entire surface of the second substrate; a liquid crystal layer filling a gap between the first and second substrates; liquid crystal capacitors between the pixel electrodes and the common electrode; first storage capacitors disposed between the pixel electrodes and first storage electrodes on the first substrate; second storage capacitors and sensing capacitors in series be

Abstract: Disclosed herein is a cleaning apparatus using ultrasonic waves. The cleaning apparatus to separate contaminations from a wafer includes a housing receiving an oscillator therein, and a rod coupled to a surface of the oscillator to transmit ultrasonic waves produced from the oscillator to a cleaning solution applied onto an upper surface of the wafer. The oscillator includes a piezo-electric device bonded to a diffusive layer consisting of a near-field region and a far-field region. The rod has a diameter-reduced portion to amplify the ultrasonic waves produced from the oscillator, thereby enabling the efficient removal of the contaminations on the wafer to be cleaned.

Abstract: An array substrate for a liquid crystal display device includes a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode; an active layer of intrinsic amorphous silicon on the gate insulating layer and corresponding to the gate electrode; an ohmic contact layer of impurity-doped amorphous silicon on the active layer; a data line crossing the gate line; a source electrode on the ohmic contact layer and connected to the data line; a drain electrode on the ohmic contact layer and spaced apart from the source electrode; a passivation layer on the source and drain electrodes and including a drain contact hole exposing a portion of the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the drain contact hole, wherein the ohmic contact layer covers the active layer in a space between the source and drain electrodes.

Abstract: A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.

Abstract: A thin film transistor, a method for manufacturing the thin film transistor, and an organic electroluminescence display using the thin film transistor are disclosed. The thin film transistor includes a gate electrode, a semiconductor layer that overlaps the gate electrode, a first insulating layer disposed between the semiconductor layer and the gate electrode, and first and second electrodes that use the semiconductor layer as a channel, and are disposed at different layers. The thin film transistor further includes a second insulating layer disposed between the semiconductor layer and one of the first and second electrodes, and a first doping semiconductor layer disposed between the semiconductor layer and the other of the first and second electrodes.