Abstract: Described are anti-doppel antibody-drug conjugates, compositions comprising them, and related methods of treating doppel-associated diseases and conditions, including cancer.

Abstract: Described herein are doppel-targeting molecules (e.g., antibodies) useful for inhibiting pathological angiogenesis and treating diseases and conditions associated with pathological angiogenesis, such as tumors, cancers, atherosclerosis, tuberculosis, asthma, pulmonary arterial hypertension (PAH), neoplasms and neoplasm-related conditions, and for detecting doppel expression in a subject. Related compositions and methods also are described.

Abstract: A power device, which has a Field Stop (FS) layer based on a semiconductor substrate between a collector region and a drift region in an FS-IGBT structure. The FS layer includes multiple implants for improved functionality of the power device.

Abstract: In one general aspect, a power device can include a first Field Stop (FS) layer of a first conductivity type formed from a first-conductive-type semiconductor substrate. The first FS layer can include a first region having a constant impurity density profile along a depth direction and a second region having an impurity density profile along the depth direction lower than the impurity density profile of the first region. The power device can include a second FS layer of the first conductivity type disposed on a first surface of the first FS layer. The second FS layer can include a first implanted FS layer having an impurity density higher than an impurity density of the first FS layer, and a second implanted FS layer having an impurity density lower than the first implanted FS layer. The second implanted FS layer can be disposed between the first FS layer and the first implanted FS layer. The power device can include a transistor device having components disposed on the second FS layer.

Abstract: In one general aspect, a method of fabricating a power device can include preparing a semiconductor substrate of a first conductivity type, and forming a first Field Stop (FS) layer and a second FS layer.

Abstract: In one general aspect, a method of fabricating a power device can include preparing a semiconductor substrate of a first conductivity type, and forming a first Field Stop (FS) layer and a second FS layer.

Abstract: A power device, which has a Field Stop (FS) layer based on a semiconductor substrate between a collector region and a drift region in an FS-IGBT structure, wherein the thickness of the FS layer and the impurity density of the collector region are easy to adjust and the FS layer has an improved function, and a fabricating method thereof.