Abstract: Disclosed is an accelerator device which includes an interface circuit that communicates with an external device, a memory that stores first data received through the interface circuit, a polar encoder that performs polar encoding with respect to the first data provided from the memory and to output a result of the polar encoding as second data, and an accelerator core that loads the second data. The first data are compressed weight data, the second data are decompressed weight data, the accelerator core is configured to perform machine learning-based inference based on the second data, and the first data are variable in length.

Abstract: A semiconductor device is disclosed. The semiconductor memory device comprises a substrate including an active region, an element isolation film disposed in the substrate and that defines the active region, a recess which is disposed in the active region and extends in a first direction, and a gate structure extending in a second direction, on the active region, wherein the gate structure includes a gate insulating film, a gate stack pattern, and a gate capping pattern which are sequentially stacked, wherein the gate insulating film extends along an upper face of the active region, and a part of the gate insulating film fills the recess, and wherein a height from a lower face of the substrate to a bottom face of the element isolation film is less than a height from the lower face of the substrate to a bottom face of the recess.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, device isolation films defining an active region in the substrate, the active region defined in the substrate by the device isolation films, a gate pattern formed in the active region, and source/drain regions on both sides of the gate pattern, in the active region, the source/drain regions include first parts, which are doped with carbon monoxide (CO) ions and are recrystallized.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.