Abstract: A semiconductor device is disclosed. The semiconductor memory device comprises a substrate including an active region, an element isolation film disposed in the substrate and that defines the active region, a recess which is disposed in the active region and extends in a first direction, and a gate structure extending in a second direction, on the active region, wherein the gate structure includes a gate insulating film, a gate stack pattern, and a gate capping pattern which are sequentially stacked, wherein the gate insulating film extends along an upper face of the active region, and a part of the gate insulating film fills the recess, and wherein a height from a lower face of the substrate to a bottom face of the element isolation film is less than a height from the lower face of the substrate to a bottom face of the recess.

Abstract: The present invention provides a method for preparing a swellable polymer to which an object is fixed. The preparation method of the present invention comprises a step of absorbing a solution of an object, which is dissolved or dispersed in a solvent with affinity for a swellable polymer, into a dried swellable polymer comprising a linker having a functional group that can bind to the object. Unlike a conventional preparation method in which an object is fixed before a swellable polymer is cross-linked, a method using a swellable polymer so as to fix an object after a polymer is cross-linked is used, and thus an object can be more rapidly fixed with efficiency higher than that of a conventional technique.

Abstract: The present invention provides a light source apparatus and method for integrating diffused light with high efficiency using a collimating including an axicon lens, collimating it, tuning the wavelength of desired light, and passing it.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, device isolation films defining an active region in the substrate, the active region defined in the substrate by the device isolation films, a gate pattern formed in the active region, and source/drain regions on both sides of the gate pattern, in the active region, the source/drain regions include first parts, which are doped with carbon monoxide (CO) ions and are recrystallized.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.

Abstract: A method of manufacturing a semiconductor device, which has buried gate electrodes, includes: forming a plurality of gate trenches in a substrate having a plurality of active regions defined by a device isolation film, the plurality of gate trenches crossing the plurality of active regions and extending parallel to each other in a first horizontal direction; selectively forming a first gate insulating layer on an exposed surface of the substrate; forming a second gate insulating layer on exposed surfaces of both the first gate insulating layer and the device isolation film; and forming a plurality of gate insulating layers by partially removing the first gate insulating layer and the second gate insulating layer, and forming a plurality of buried gate electrodes.