Abstract: A method for depositing a multi-layered silicon nitride film using a combination of deposition methods includes the steps of placing the substrate into a first reactor and depositing on at least a portion of a surface of a substrate a first silicon nitride film, a second silicon nitride film, and a third silicon nitride film, which together form the multi-layered silicon nitride film, in a sequence of deposition methods alternating between (i) either plasma enhanced atomic layered deposition (PEALD) or plasma enhanced cyclic chemical vapor deposition (PECCVD), and (ii) PECVD as described herein and using at least one silicon precursor compound comprising at least three Si—N bonds and at least three SiH3 groups represented by formulae A to C described herein.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allow anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from about 3 to about 5 mol. %, suitable for forming a ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films suitable for forming ferroelectric materials using the formulations.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: A composition for depositing a high quality silicon nitride is introduced into a reactor that contains a substrate, followed by introduction of a plasma that includes an ammonia source. The composition includes a silicon precursor compound having Formula as defined herein.

Abstract: A method for forming a silicon nitride film that may be carbon doped via a plasma ALD process includes introducing a substrate into a reactor, which is heated to up to about 600° C. At least one silicon precursor as defined herein and having one or two Si—C—Si linkages is introduced to form a chemisorbed film on the substrate. The reactor is then purged of any unconsumed precursors and/or reaction by-products with a suitable inert gas. A plasma comprising nitrogen is introduced into the reactor to react with the chemisorbed film to form the silicon nitride film that may be carbon doped. The reactor is again purged of any reaction by-products with a suitable inert gas. The steps are repeated as necessary to bring the deposited silicon nitride film that may be carbon doped to a predetermined thickness.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.

Abstract: A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: A memory system includes a voltage generator disposed in a high temperature region, and suitable for generating a first voltage; a memory disposed in a low temperature region, and suitable for using a second voltage; and a voltage converter disposed between the high temperature region and the low temperature region, suitable for converting the first voltage into the second voltage, and including a core made from a material having lower heat conductivity than a metal.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.

Abstract: A cleaning robot having an exhaust air feedback function can utilize the vacuum suction force generated by a suction motor as well as spray exhaust air onto the surface to be cleaned by circulating the air using the suction motor, thereby improving foreign material removal efficiency. The cleaning robot includes a suction unit, a suction motor for drawing in foreign materials from the surface to be cleaned, along with air, through the suction unit, a dust collector for capturing the foreign materials, so that the air is exhausted through the suction motor, and an exhaust air feedback unit for feeding the air. The cleaning robot also includes a spray nozzle unit inserted into the suction unit and placed on the leading end of the suction unit, the spray nozzle unit spraying the air fed by the exhaust air feedback unit, to the surface to be cleaned.

Abstract: A substrate cleaning apparatus includes a supporting plate supporting a substrate and a shielding unit that is disposed above the substrate to protect the substrate. A portion of the shielding unit, which is adjacent to a focal point where light for generating shock waves is focused, is switched. Therefore, the substrate cleaning apparatus prevents the concentration of plumes and residence beams, which are generated together with the shock waves, on a specific region of the shielding unit and further prevents the recontamination of the substrate by the damage of the shielding unit.

Abstract: In a method and an apparatus for cleaning a substrate using a laser beam, an inner chamber is disposed in a process chamber to define a space in which a laser-induced shock wave is generated. The laser beam is focused on a laser focus positioned in the inner chamber, and thus the laser-induced plasma shock wave is generated around the laser focus. The plasma shock wave is reflected from inner surfaces of the inner chamber and is irradiated on the substrate through a lower portion of the inner chamber. As a result, the intensity of the plasma shock wave irradiated on the substrate is increased, and thus the contaminants on the substrate may be effectively removed.

Abstract: A multistage amplifying circuit includes a first amplifying circuit that either samples a first analog voltage input or amplifies a difference between the first analog voltage and a first digital voltage converted from the first analog voltage, in response to a control signal. A second amplifying circuit either samples a second analog voltage input or amplifies a difference between the second analog voltage and a second digital voltage converted from the second analog voltage, in response to the control signal. A common amplifier receives output voltages of the first amplifying circuit and the second amplifying circuit and either resets the output voltage of the first amplifying circuit and determines an output voltage by using the second amplifying circuit, or resets the output voltage of the second amplifying circuit and determines an output voltage by using the first amplifying circuit, in response to the control signal.

Abstract: A multistage amplifying circuit includes a first amplifying circuit that either samples a first analog voltage input or amplifies a difference between the first analog voltage and a first digital voltage converted from the first analog voltage, in response to a control signal. A second amplifying circuit either samples a second analog voltage input or amplifies a difference between the second analog voltage and a second digital voltage converted from the second analog voltage, in response to the control signal. A common amplifier receives output voltages of the first amplifying circuit and the second amplifying circuit and either resets the output voltage of the first amplifying circuit and determines an output voltage by using the second amplifying circuit, or resets the output voltage of the second amplifying circuit and determines an output voltage by using the first amplifying circuit, in response to the control signal.

Abstract: A cleaning robot having an exhaust air feedback function can utilize the vacuum suction force generated by a suction motor as well as spray exhaust air onto the surface to be cleaned by circulating the air using the suction motor, thereby improving foreign material removal efficiency. The cleaning robot includes a suction unit, a suction motor for drawing in foreign materials from the surface to be cleaned, along with air, through the suction unit, a dust collector for capturing the foreign materials, so that the air is exhausted through the suction motor, and an exhaust air feedback unit for feeding the air. The cleaning robot also includes a spray nozzle unit inserted into the suction unit and placed on the leading end of the suction unit, the spray nozzle unit spraying the air fed by the exhaust air feedback unit, to the surface to be cleaned.

Abstract: A substrate cleaning apparatus includes a supporting plate supporting a substrate and a shielding unit that is disposed above the substrate to protect the substrate. A portion of the shielding unit, which is adjacent to a focal point where light for generating shock waves is focused, is switched. Therefore, the substrate cleaning apparatus prevents the concentration of plumes and residence beams, which are generated together with the shock waves, on a specific region of the shielding unit and further prevents the recontamination of the substrate by the damage of the shielding unit.

Abstract: In a method and an apparatus for cleaning a substrate using a laser beam, an inner chamber is disposed in a process chamber to define a space in which a laser-induced shock wave is generated. The laser beam is focused on a laser focus positioned in the inner chamber, and thus the laser-induced plasma shock wave is generated around the laser focus. The plasma shock wave is reflected from inner surfaces of the inner chamber and is irradiated on the substrate through a lower portion of the inner chamber. As a result, the intensity of the plasma shock wave irradiated on the substrate is increased, and thus the contaminants on the substrate may be effectively removed.