Patents by Inventor Se Woon KIM

Se Woon KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240148006
    Abstract: Disclosed is a lower folding device for forming dumplings. The lower folding device for forming dumplings according to the present invention comprises: a dumpling skin pressing unit which includes a plurality of dumpling skin folding units that are simultaneously operated, and which drives the plurality of dumpling skin folding units at a preset position; a cam rail unit for folding which is arranged adjacent to the dumpling skin pressing unit and is connected to the dumpling skin pressing unit to move the dumpling skin folding units; and a movement unit for folding which is connected to the dumpling skin pressing unit and moves the dumpling skin pressing unit relative to the cam rail unit for folding.
    Type: Application
    Filed: March 2, 2022
    Publication date: May 9, 2024
    Applicant: CJ CHEILJEDANG CORPORATION
    Inventors: Bong Jin JANG, Da Woon JUNG, Se Jin KIM, Soon Suk BAE, Sang Cheol KIM, Yong Gyu LEE
  • Publication number: 20240138421
    Abstract: An in-line dumpling molding system is disclosed. The in-line dumpling molding system according to the present invention comprises: a dumpling wrapper cutting device, which cuts a supplied dough sheet to form dumpling wrappers; a dumpling-molding lower folding device, which is disposed below the dumpling wrapper cutting device, on which the cut dumpling wrappers are loaded, and which presses and folds the dumpling wrappers onto which dumpling fillings have been supplied; and a sealing device, which is disposed above the dumpling-molding lower folding device, and presses and seals the folded dumpling wrappers.
    Type: Application
    Filed: March 2, 2022
    Publication date: May 2, 2024
    Applicant: CJ CHEILJEDANG CORPORATION
    Inventors: Bong Jin JANG, Se Jin KIM, Da Woon JUNG, Soon Suk BAE, Sang Cheol KIM, Yong Gyu LEE
  • Patent number: 11974503
    Abstract: Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: April 30, 2024
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Hyun Kim, Young Sam Yoo, Se Woon Lee
  • Patent number: 9502257
    Abstract: A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: November 22, 2016
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Jeong Ho Cho, Se Woon Kim, Kyung Min Kim, Jung Goo Park
  • Publication number: 20150311299
    Abstract: A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate insulating layer and a floating gate disposed on a substrate, a dielectric layer formed perpendicular to the floating gate insulating layer and at two sides of the floating gate, and a first control gate at a first side of the dielectric layer distal from the floating gate and a second control gate at a second side of the dielectric layer distal from the floating gate, wherein the first control gate and the second control gate are connected to each other, and a second width of the second control gate is wider than a first width of the first control gate. A length of a control gate of a non-volatile memory device may be extended to effectively preventing the generation of leakage current when a control gate is off.
    Type: Application
    Filed: July 22, 2014
    Publication date: October 29, 2015
    Applicant: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: Jeong Ho CHO, Se Woon KIM, Kyung Min KIM, Jung Goo PARK