Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: A method for coding image information includes generating prediction information by predicting information on a current coding unit, and determining whether the information on the current coding unit is the same as the prediction information. When the information on the current coding unit is the same as the prediction information, a flag indicating that the information on the current coding unit is the same as the prediction information is coded and transmitted. When the information on the current coding unit is not the same as the prediction information, a flag indicating that the information on the current coding unit is not the same as the prediction information and the information on the current coding unit are coded and transmitted.

Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.

Abstract: A self-regulating intelligent building automation system includes: a smart sensing unit including a first sensing unit disposed in a first specific space and a second sensing unit disposed in a second specific space separated from the first specific space; a self-regulating terminal unit including a first self-regulating terminal disposed in the first specific space and a second self-regulating terminal disposed in the second specific space; a network management unit managing a network without a direct digital control unit and wirelessly communicating with the smart sensing unit and the self-regulating terminal unit; and a central monitoring unit connected to the network management unit via the Internet.

Abstract: A self-regulating intelligent building automation system includes: a smart sensing unit including a first sensing unit disposed in a first specific space and a second sensing unit disposed in a second specific space separated from the first specific space; a self-regulating terminal unit including a first self-regulating terminal disposed in the first specific space and a second self-regulating terminal disposed in the second specific space; a network management unit managing a network without a direct digital control unit and wirelessly communicating with the smart sensing unit and the self-regulating terminal unit; and a central monitoring unit connected to the network management unit via the Internet.

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

Abstract: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

Abstract: A repeater using a digital filter is disclosed. The repeater comprises a MUX filter for filtering an RF signal received through an antenna or a signal to be transmitted through the antenna; a low noise amplifier for lowering noise of the signal filtered by the MUX filter; a down converter for converting the signal outputted from the low noise amplifier into an IF band signal to digitalize the signal; a digital filter for filtering the digital signal outputted form the down converter based on parameters inputted by a user; a filtering controller for controlling the digital filter by using a filtering coefficient calculated based on the parameters; an up converter for converting the signal filtered by the digital filter into an RF band signal; and a high power amplifier for amplifying the signal outputted from the up converter to a high power signal.

Abstract: A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a substrate. A first trench is formed in the layer, and a mask layer is formed in the first trench. The mask layer has a first thickness from a bottom surface of the first trench to the top of the mask layer. The mask layer is patterned to form a mask that at least partially exposes a sidewall of the first trench. A portion of the mask adjacent to the exposed sidewall of the first trench has a second thickness smaller than the first thickness. The layer is etched to form a second trench using the mask as an etching mask. The second trench is in fluid communication with the first trench. A conductive pattern is formed in the first trench and the second trench.

Abstract: Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.

Abstract: Memory devices and methods of fabricating the same include a substrate including a cell region and a peripheral circuit region, data storages on the cell region, first bit lines on and coupled to the data storages, first contacts coupled to peripheral transistors on the peripheral circuit region, and second bit lines on and coupled to the first contacts. The second bit lines may each have a lowermost surface lower than a lowermost surface of the data storages.

Abstract: A repeater using a digital filter is disclosed. The repeater comprises a MUX filter for filtering an RF signal received through an antenna or a signal to be transmitted through the antenna; a low noise amplifier for lowering noise of the signal filtered by the MUX filter; a down converter for converting the signal outputted from the low noise amplifier into an IF band signal to digitalize the signal; a digital filter for filtering the digital signal outputted form the down converter based on parameters inputted by a user; a filtering controller for controlling the digital filter by using al filtering coefficient calculated based on the parameters; an up converter for converting the signal filtered by the digital filter into an RF band signal; and a high power amplifier for amplifying the signal outputted from the up converter to a high power signal.

Abstract: Disclosed is a method for preparing a metal oxide solid solution in nano size. The metal oxide solid solution is prepared by reacting a reactant mixture containing water and at least two water-soluble metal compounds at 200 to 700° C. under a pressure of 180 to 550 bar in a continuous manner, wherein the reactant mixture contains the metal compounds at an amount of 0.01 to 30% by weight in total and the solid solution has a crystallite size of 1 to 1,000 nm. The metal oxide solid solution is, in particular suitable as a UV light shielding agent or as an oxygen storage component.

Abstract: An iris recognition camera is provided which includes a driving barrel configured to support a lens, a moving unit configured to reciprocatingly move the driving barrel to perform both focus and zoom operations, and a position sensor configured to detect a position of the driving barrel.

Abstract: Disclosed are a concentrate of fine ceria particles for chemical mechanical polishing, and a method of preparing the same. The method includes reacting a reactant mixture comprising i) water, ii) an aqueous solution of water-soluble cerium salt compound, and iii) ammonia or ammonium salt at a reaction temperature of 250-700? under a reaction pressure of 180-550 bar for 0.01 sec to 10 min in a continuous reactor to obtain a solution containing the fine ceria particles, the cerium salt compound being contained at an amount of 0.01 to 20 wt % in the reactant mixture; and concentrating the solution containing the fine ceria particles in a concentrator having a filter with a pore size of 0.01 to 10?. The concentrate is advantageous in that a CMP slurry and a dispersing solution are easily produced by diluting the concentrate and adding an additive to the concentrate.