Patents by Inventor Se Yeon Jung
Se Yeon Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956997Abstract: A display device according to an exemplary embodiment includes: a substrate including a display area and a transmission area; a metal blocking layer disposed in the display area of the substrate; an inorganic insulating layer disposed on the metal blocking film; a transistor disposed on the inorganic insulating layer; an emission layer connected to the transistor; and a light blocking layer and a color filter disposed on the emission layer of the display area, wherein the edge of the light blocking layer is protruded toward the transmission area more than the edge of the metal blocking layer.Type: GrantFiled: August 23, 2021Date of Patent: April 9, 2024Assignee: Samsung Display Co., Ltd.Inventors: Se Wan Son, Nak Cho Choi, Moo Soon Ko, Dong Hyun Son, Sang Hoon Oh, Jin Goo Jung, Kyung Hyun Choi, Hae-Yeon Lee, Seong Min Cho
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Patent number: 11749778Abstract: A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings.Type: GrantFiled: August 24, 2018Date of Patent: September 5, 2023Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Chang Hyeong Lee, June O Song, Tae Sung Lee, Chang Man Lim, Se Yeon Jung, Byung Yeon Choi, Sung Min Hwang
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Publication number: 20220037852Abstract: The surface emitting laser device according to the embodiment includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, and a third metal layer disposed between the first metal layer and the second metal layer. The first to third metal layers may include different materials, and the second metal layer may include copper (Cu). The third metal layer may prevent diffusion of copper from the second metal layer into the first metal layer.Type: ApplicationFiled: September 9, 2019Publication date: February 3, 2022Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Se Yeon JUNG, Seung Hwan KIM
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Publication number: 20210143608Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening.Type: ApplicationFiled: July 26, 2019Publication date: May 13, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Yong Gyeong LEE, Se Yeon JUNG, Tae Yong LEE
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Publication number: 20210028604Abstract: This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.Type: ApplicationFiled: April 12, 2019Publication date: January 28, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Se Yeon JUNG, Yong Gyeong LEE, Seung Hwan KIM
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Patent number: 10847678Abstract: An embodiment comprises: a light emitting structure comprising a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light transmissive conduction layer arranged on the second conductive type semiconductor layer. The light transmissive conduction layer comprises: a first conductive oxide layer arranged on the first conductive type semiconductor layer and comprising at least one first metal element and oxygen; and a second conductive oxide layer arranged on the first conductive oxide layer and comprising a compound consisting of the same metal element as the at least one first metal element, a second metal element, and oxygen.Type: GrantFiled: May 4, 2017Date of Patent: November 24, 2020Assignee: LG Innotek Co., Ltd.Inventor: Se Yeon Jung
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Publication number: 20200203566Abstract: A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings.Type: ApplicationFiled: August 24, 2018Publication date: June 25, 2020Inventors: Chang Hyeong LEE, June O SONG, Tae Sung LEE, Chang Man LIM, Se Yeon JUNG, Byung Yeon CHOI, Sung Min HWANG
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Patent number: 10600945Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.Type: GrantFiled: July 13, 2018Date of Patent: March 24, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Chang Man Lim, Ki Seok Kim, Young Shin Kim, June O Song, Ju Hyeon Oh, Chang Hyeong Lee, Tae Sung Lee, Se Yeon Jung, Byung Yeon Choi, Sung Min Hwang
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Patent number: 10497835Abstract: A light emitting element according to one embodiment can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a light-transmitting ohmic layer on the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode on the light-transmitting ohmic layer. The light emitting element can include two first sides facing each other, and two second sides facing each other. The width of the first side is greater than the width of the second side, and the first side and the second side can be perpendicular to each other. The distance between the first branch electrode and the second branch electrode is ? to ½ of the width of the second side of either one thereof.Type: GrantFiled: September 26, 2016Date of Patent: December 3, 2019Assignee: LG INNOTEK CO., LTD.Inventor: Se Yeon Jung
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Publication number: 20190165210Abstract: An embodiment comprises: a light emitting structure comprising a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a light transmissive conduction layer arranged on the second conductive type semiconductor layer. The light transmissive conduction layer comprises: a first conductive oxide layer arranged on the first conductive type semiconductor layer and comprising at least one first metal element and oxygen; and a second conductive oxide layer arranged on the first conductive oxide layer and comprising a compound consisting of the same metal element as the at least one first metal element, a second metal element, and oxygen.Type: ApplicationFiled: May 4, 2017Publication date: May 30, 2019Applicant: LG INNOTEK CO., LTD.Inventor: Se Yeon JUNG
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Publication number: 20190019929Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.Type: ApplicationFiled: July 13, 2018Publication date: January 17, 2019Applicant: LG INNOTEK CO., LTD.Inventors: Chang Man LIM, Ki Seok KIM, Young Shin KIM, June O SONG, Ju Hyeon OH, Chang Hyeong LEE, Tae Sung LEE, Se Yeon JUNG, Byung Yeon CHOI, Sung Min HWANG
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Publication number: 20180358513Abstract: One embodiment relates to a light emitting element, a method for manufacturing a light emitting element, a light emitting element package, and a light emitting device. The light emitting element according to one embodiment can comprise: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a light-transmitting ohmic layer on the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode on the light-transmitting ohmic layer. The light emitting element can include two first sides facing each other, and two second sides facing each other. The width of the first side is greater than the width of the second side, and the first side and the second side can be perpendicular to each other.Type: ApplicationFiled: September 26, 2016Publication date: December 13, 2018Inventor: Se Yeon JUNG
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Patent number: 9806233Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.Type: GrantFiled: August 9, 2016Date of Patent: October 31, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Se Yeon Jung, Yong Gyeong Lee
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Patent number: 9773948Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.Type: GrantFiled: June 30, 2015Date of Patent: September 26, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Se Yeon Jung, Yong Gyeong Lee
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Publication number: 20160351769Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.Type: ApplicationFiled: August 9, 2016Publication date: December 1, 2016Applicant: LG INNOTEK CO., LTD.Inventors: Se Yeon JUNG, Yong Gyeong LEE
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Patent number: 9437781Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.Type: GrantFiled: October 29, 2015Date of Patent: September 6, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Se Yeon Jung, Yong Gyeong Lee
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Publication number: 20160126423Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.Type: ApplicationFiled: October 29, 2015Publication date: May 5, 2016Applicant: LG INNOTEK CO., LTD.Inventors: Se Yeon JUNG, Yong Gyeong LEE
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Publication number: 20160005917Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.Type: ApplicationFiled: June 30, 2015Publication date: January 7, 2016Applicant: LG INNOTEK CO., LTD.Inventors: Se Yeon JUNG, Yong Gyeong LEE
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Patent number: 8809895Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.Type: GrantFiled: July 1, 2011Date of Patent: August 19, 2014Assignee: LG Innotek Co., Ltd.Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji hyung Moon, Se Yeon Jung, Tae-Yeon Seong
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Patent number: 8525215Abstract: Provided are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a light emitting structure layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an oxide protrusion disposed on at least a portion of the second conducive semiconductor layer; and a current spreading layer on the second conductive semiconductor layer and the oxide protrusion.Type: GrantFiled: July 1, 2011Date of Patent: September 3, 2013Assignee: LG Innotek Co., Ltd.Inventors: Kwang Ki Choi, Hwan Hee Jeong, Ji hyung Moon, Sang Youl Lee, June O Song, Se Yeon Jung, Tae-Yeon Seong