Abstract: A method of fabricating and mounting a flip chip includes using an environmentally friendly plasma gas, which minimizes safety hazards during an implementation of the method and does not require an additional heat source during a reflow process thereof. That is, the method includes reflowing a solder bump using an argon-hydrogen plasma process. The argon-hydrogen plasma process used to fabricate the flip chip includes maintaining a pressure in a chamber at 250 to 270 mtorr, feeding a mixed gas of argon with 10 to 20% hydrogen to the chamber to generate a plasma with power of 100 to 200 W, and exposing the flip chip to the plasma for 30 to 120 seconds. Additionally, an argon-hydrogen plasma process used to mount the flip chip includes maintaining pressure in a chamber at 100 to 400 mtorr, feeding a mixed gas of argon with 0 to 20% hydrogen to the chamber to generate a plasma with power of 10 to 50 W, and exposing the flip chip to the plasma for 10 to 120 seconds.

Abstract: A method of fabricating and mounting a flip chip includes using an environmentally friendly plasma gas, which minimizes safety hazards during an implementation of the method and does not require an additional heat source during a reflow process thereof. That is, the method includes reflowing a solder bump using an argon-hydrogen plasma process. The argon-hydrogen plasma process used to fabricate the flip chip includes maintaining a pressure in a chamber at 250 to 270 mtorr, feeding a mixed gas of argon with 10 to 20% hydrogen to the chamber to generate a plasma with power of 100 to 200 W, and exposing the flip chip to the plasma for 30 to 120 seconds. Additionally, an argon-hydrogen plasma process used to mount the flip chip includes maintaining pressure in a chamber at 100 to 400 mtorr, feeding a mixed gas of argon with 0 to 20% hydrogen to the chamber to generate a plasma with power of 10 to 50 W, and exposing the flip chip to the plasma for 10 to 120 seconds.