Abstract: Disclosed are semiconductor devices and electronic systems including the same. The semiconductor device includes a substrate that has a recess region, a gate electrode on a bottom surface of the recess region, a gate dielectric layer between the gate electrode and the bottom surface of the recess region, a plurality of shield electrodes on laterally opposite sides of the gate electrode and on inner sidewalls of the recess region, a plurality of dielectric patterns between the shield electrodes and the inner sidewalls of the recess region, a plurality of impurity regions in the substrate and on opposite sides of the shield electrodes, and a channel region in the substrate and below the bottom surface of the recess region.

Abstract: An ultrasonic probe comprising a piezoelectric element, a first electrode formed on a substantial portion of a first main face, a first side face and a part of a second main face of the piezoelectric element, and a second electrode formed on a substantial portion of a second main face, a second side face and a part of a first main face of the piezoelectric element, the two electrodes being isolated from each other by two grooves formed on the first and second main faces of the piezoelectric element, in a manner parallel to the side edges of the piezoelectric element, respectively, has good vibration and probing properties.

Abstract: An ultrasonic probe comprising a piezoelectric element, a first electrode formed on a substantial portion of a first main face, a first side face and a part of a second main face of the piezoelectric element, and a second electrode formed on a substantial portion of a second main face, a second side face and a part of a first main face of the piezoelectric element, the two electrodes being isolated from each other by two grooves formed on the first and second main faces of the piezoelectric element, in a manner parallel to the side edges of the piezoelectric element, respectively, has good vibration and probing properties.