Abstract: The present disclosure relates to a field effect transistor (FET) structure. The FET structure has a substrate, an active region, a dielectric layer provided over a channel of the active region and a gate provided over the dielectric layer. The active region comprises a source, a drain and the channel provided between the source and the drain. The active region is surrounded by an isolation trench, such that width edges of the channel are directly adjacent to the isolation trench. Current paths run between the source and the drain, through the channel. The FET is configured such that current paths running proximal to the channel edges are reduced or weaker in comparison to a dominant current path running through a center of the channel. One or more of the channel, the dielectric layer or the substrate can be modified or adapted to provide the reduced and dominant current paths.

Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.

Abstract: Thin film resistive sensors typically include a number of resistive components. These components should be well matched in order for the sensor to provide accurate readings. When a sensor is incorporated within an integrated circuit, the resistive components may be formed over, or under, metallic traces that form part of other components. As a result, the thin film resistive components are subjected to different levels of stress. This disclosure provides a structure that is arranged to mitigate the effects of stress.

Abstract: Thin film resistive sensors typically include a number of resistive components. These components should be well matched in order for the sensor to provide accurate readings. When a sensor is incorporated within an integrated circuit, the resistive components may be formed over, or under, metallic traces that form part of other components. As a result, the thin film resistive components are subjected to different levels of stress. This disclosure provides a structure that is arranged to mitigate the effects of stress.

Abstract: It may be desirable to sense the concentration of a gas in another gas. This measurement may be important to warn of impending danger. Gas sensors may be made in batches by a manual process, leading to large variations in sensor performance between batches and indeed between sensors in a batch. This means the sensors often need individual calibration before use. The present approach to sensor design can make use of integrated circuit manufacturing techniques to give rise to sensors with well-matched and reproducible characteristics.

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.

Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.