Patents by Inventor Seamus Whiston

Seamus Whiston has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistors having improved breakdown voltages and methods of forming the same
    Patent number: 8476684
    Abstract: Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: July 2, 2013
    Assignee: Analog Devices, Inc.
    Inventors: Edward John Coyne, Paul Malachy Daly, Jagar Singh, Seamus Whiston, Patrick Martin McGuinness, William Allan Lane
  • FIELD EFFECT TRANSISTORS HAVING IMPROVED BREAKDOWN VOLTAGES AND METHODS OF FORMING THE SAME
    Publication number: 20120074493
    Abstract: Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region.
    Type: Application
    Filed: September 29, 2010
    Publication date: March 29, 2012
    Applicant: ANALOG DEVICES, INC.
    Inventors: Edward John Coyne, Paul Malachy Daly, Jagar Singh, Seamus Whiston, Patrick Martin McGuinness, William Allan Lane