Abstract: An electronic device for interconnection with an integrated circuit device is provided. The electronic device includes an interconnection surface configured to oppose the integrated circuit device with an interconnect structure disposed therebetween. The electronic device also includes at least one electronic device contact pad disposed on the interconnection surface for bonding to the interconnect structure. The at least one electronic device contact pad has at least one 3-dimensional projection configured to extend from the electronic device contact pad toward the integrated circuit device. The at least one 3-dimensional projection is configured to aid in bonding the electronic device contact pad to the interconnect structure to electrically couple the electronic device to the integrated circuit device.

Abstract: Methods and apparatus for enhancing the flatness of a die by applying adhesive to a shim having a selected flatness, rotating the shim to spread the adhesive to a layer having a uniform thickness, evacuating a chamber to create a vacuum; manipulating a die onto the adhesive layer in the chamber; and reducing a level of the vacuum to pressure the die onto the adhesive layer such that the bow in the die is reduced as the die conforms to the shim.

Abstract: Methods and apparatus for enhancing the flatness of a die by applying adhesive to a shim having a selected flatness, rotating the shim to spread the adhesive to a layer having a uniform thickness, evacuating a chamber to create a vacuum; manipulating a die onto the adhesive layer in the chamber; and reducing a level of the vacuum to pressure the die onto the adhesive layer such that the bow in the die is reduced as the die conforms to the shim.

Abstract: According to embodiments of the present disclosure, a method for removing oxide includes placing a sensor chip assembly having an oxide layer formed on a portion thereof within an enclosed and controlled environment. The portion of the sensor chip assembly is exposed to a reactive gas and a UV light to result in a substantial removal of the oxide layer formed on the portion of the sensor chip assembly.

Abstract: According to embodiments of the present disclosure, a method for removing oxide includes placing a sensor chip assembly having an oxide layer formed on a portion thereof within an enclosed and controlled environment. The portion of the sensor chip assembly is exposed to a reactive gas and a UV light to result in a substantial removal of the oxide layer formed on the portion of the sensor chip assembly.

Abstract: According to embodiments of the present disclosure, a method for removing oxide includes placing a sensor chip assembly having an oxide layer formed on a portion thereof within an enclosed and controlled environment. The portion of the sensor chip assembly is exposed to a reactive gas and a UV light to result in a substantial removal of the oxide layer formed on the portion of the sensor chip assembly.