Abstract: A method of manufacturing a silicon wafer with robust gettering sites and a low concentration of surface defects is provided. The method comprises adding polycrystalline silicon to a crucible; adding a nitrogen-containing dopant to the crucible; heating the crucible to form a nitrogen-doped silicon melt; pulling a silicon crystal from the melt according to the Czochralski technique; forming a silicon wafer from the silicon crystal, wherein the silicon wafer includes a front surface and a back surface; placing the silicon wafer into a deposition chamber; heating the wafer; and simultaneously depositing an epitaxial first film of a desired compound onto the front surface of the wafer and a second film of the desired compound onto the back surface of the wafer.

Abstract: A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.

Abstract: A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.

Abstract: A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.

Abstract: A method of manufacturing a damage-resistant silicon wafer is provided. The method comprises adding polycrystalline silicon to a crucible, adding a nitrogen-containing dopant to the crucible, heating the polycrystalline silicon to form a melt of nitrogen-doped silicon, pulling a nitrogen-doped silicon crystal from the melt using a seed crystal according to the Czochralski technique, forming a silicon wafer from the silicon crystal, the silicon wafer having an edge, and rounding the edge of the silicon wafer. The method may optionally include applying an electrical potential across the crucible while pulling the nitrogen-doped silicon crystal from the melt.

Abstract: A method of manufacturing a silicon wafer with robust gettering sites and a low concentration of surface defects is provided. The method comprises adding polycrystalline silicon to a crucible; adding a nitrogen-containing dopant to the crucible; heating the crucible to form a nitrogen-doped silicon melt; pulling a silicon crystal from the melt according to the Czochralski technique; forming a silicon wafer from the silicon crystal, wherein the silicon wafer includes a front surface and a back surface; placing the silicon wafer into a deposition chamber; heating the wafer; and simultaneously depositing an epitaxial first film of a desired compound onto the front surface of the wafer and a second film of the desired compound onto the back surface of the wafer.

Abstract: A low-cost method of manufacturing a silicon wafer is provided. The method comprises providing a crucible for melting silicon; adding silicon to the crucible; melting the silicon to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt according to the Czochralski technique at a pulling rate of greater than 1.1 mm/min; and forming a silicon wafer from the silicon crystal. The method may also include adding a nitrogen-containing dopant to the crucible. Furthermore, the method may include etching the wafer first in an alkaline etching solution, and then in an acidic etching solution. The method may also include simultaneously depositing an epitaxial first film on the frontside of the wafer and a second film on the backside of the wafer, wherein the second film traps impurities on the backside of the wafer so the impurities do not contaminate the frontside of the wafer while the epitaxial first film is being grown.

Abstract: A method of manufacturing a high-purity epitaxial silicon wafer is provided. The method includes providing a quartz crucible for melting silicon; adding silicon to the crucible; heating the crucible to form a melt; applying an electrical potential across the crucible; pulling a silicon crystal from the melt; forming a silicon wafer from the silicon crystal, the wafer having a frontside and a backside; and simultaneously depositing an epitaxial first silicon film on the frontside of the wafer and a polycrystalline second silicon film on the backside of the wafer.