Abstract: A process for forming a conductive region without photoresist-related reflective notching damage has a starting step (23) wherein a photoresist layer is formed over a conductive layer (34). The photoresist layer is used to mask the conductive layer. The photoresist layer is lithographically processed and chemically developed to form a masking photoresist region (38) overlying the conductive layer (34). The masking photoresist region has a sidewall and has a reflective notch which results from the lithographic processing. A hardening step, performed in-situ with a plurality of conductive layer etch steps, is used to form an etch-resistant polymer layer (40) on the photoresist sidewalls and on the reflective notch. The conductive layer (34) is etched after the formation of the polymer layer (40) to form a conductive region. The polymer layer (40) reduces an etch rate of the reflective notch and the photoresist sidewall so that the conductive region is formed having no reflective notching etch damage.