Patents by Inventor Sean L. Rommel

Sean L. Rommel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making interband tunneling diodes
    Patent number: 7303969
    Abstract: Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: December 4, 2007
    Assignee: The Ohio State University
    Inventors: Paul R. Berger, Phillip E. Thompson, Roger Lake, Karl Hobart, Sean L. Rommel
  • Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
    Patent number: 6803598
    Abstract: Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.
    Type: Grant
    Filed: May 5, 2000
    Date of Patent: October 12, 2004
    Assignee: University of Delaware
    Inventors: Paul R. Berger, Phillip E. Thompson, Roger Lake, Karl Hobart, Sean L. Rommel
  • Si-based resonant interband tunneling diodes and method of making interband tunneling diodes
    Publication number: 20030049894
    Abstract: Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.
    Type: Application
    Filed: August 21, 2001
    Publication date: March 13, 2003
    Applicant: University of Delaware
    Inventors: Paul R. Berger, Phillip E. Thompson, Roger Lake, Karl Hobart, Sean L. Rommel