Abstract: An improved cool chamber is provided which includes a gas manifold for redistributing the gas flow and reducing the velocity of the gas particles that are directed towards a wafer. The gas manifold has a generally circular body that defines a plurality of outlets. A plurality of tubes, each having a first end and a second end, extend from the body. The first end is coupled to the body at the outlets. A vent diffuser is coupled to the second end of each tube. The vent diffuser includes a sintered gasket for providing point-of-use filtering of the gas and diffusion of the gas. The gas manifold is at a height different from the height of the plane of the wafer. An adapter plate that includes a bypass port is also provided. The bypass port is employed to conduct gas from the gas manifold back into the chamber during de-pressurization.

Abstract: A physical vapor deposition chamber assembly is provided for use in depositing metal particles onto a wafer placed inside the chamber assembly. The physical vapor deposition assembly includes a chamber having an opening, and a target containing a desired metal to be deposited on a wafer placed inside the chamber, with the target adapted to be secured at the opening of the chamber. The assembly further includes an insulator positioned along the boundary of the opening, and having opposing first and second surfaces, with the second surface having a ridge extending therealong and defining a narrow horizontal ridge surface. A first O-ring is positioned between the first surface of the insulator and the chamber along the boundary of the opening, and a second O-ring is positioned between the ridge surface of the insulator and the target.