Patents by Inventor Sean R. Kirkpatrick

Sean R. Kirkpatrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240018003
    Abstract: A method for removing contaminants from a graphene product uses an accelerated neutral atom beam to remove product contaminants without disruption of the product's crystalline lattice and morphology to enable usage in high purity devices/systems such as exemplified in semi-conductor and like high purity needs applications.
    Type: Application
    Filed: June 27, 2023
    Publication date: January 18, 2024
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • Patent number: 11735432
    Abstract: A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: August 22, 2023
    Assignee: EXOGENESIS CORPORATION
    Inventors: Sean R. Kirkpatrick, Kiet A. Chau, Thy Yam, Michael J. Walsh
  • Patent number: 11698582
    Abstract: A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: July 11, 2023
    Assignee: Exogenesis Corporation
    Inventors: Joseph B. Khoury, Laurence B. Tarrant, Sean R. Kirkpatrick, Richard C. Svrluga
  • Publication number: 20210405523
    Abstract: A device such as a medical device and a method for making same provides a device surfaces modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets or to match surface energy of the device to that of a protein with the property of inhibition of bacterial colonization that can coat the all or part of the device surface to effect such inhibition.
    Type: Application
    Filed: April 5, 2021
    Publication date: December 30, 2021
    Applicant: Exogenesis Corporation
    Inventors: Joseph Khoury, Sean R. Kirkpatrick, Michael J. Walsh, James G. Bachand, Allen R. Kirkpatrick, Thomas J. Webster
  • Patent number: 11199769
    Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: December 14, 2021
    Inventors: Sean R. Kirkpatrick, Rangarajan Jagannathan
  • Publication number: 20210225661
    Abstract: A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.
    Type: Application
    Filed: April 8, 2021
    Publication date: July 22, 2021
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Kiet A. Chau, Thy Yam, Michael J. Walsh
  • Patent number: 11048162
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: June 29, 2021
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Patent number: 11004692
    Abstract: A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: May 11, 2021
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Richard C. Svrluga
  • Patent number: 10971324
    Abstract: A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: April 6, 2021
    Assignee: Exogenesis Corporation
    Inventors: Joseph Khoury, Sean R. Kirkpatrick, Michael J. Walsh, James G. Bachand, Allen R. Kirkpatrick
  • Publication number: 20200387065
    Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2, which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
    Type: Application
    Filed: December 31, 2019
    Publication date: December 10, 2020
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • Patent number: 10858732
    Abstract: A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: December 8, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh
  • Patent number: 10825685
    Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: November 3, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga
  • Publication number: 20200249565
    Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.
    Type: Application
    Filed: September 9, 2019
    Publication date: August 6, 2020
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Patent number: 10670960
    Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: June 2, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Kiet A. Chau, Son T. Chau
  • Patent number: 10627352
    Abstract: Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: April 21, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Patent number: 10556042
    Abstract: A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: February 11, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Richard C. Svrluga, Stephen M. Blinn
  • Patent number: 10539867
    Abstract: A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: January 21, 2020
    Assignee: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • Publication number: 20200022247
    Abstract: The present disclosure present and method and apparatus for controlling the direction of a Neutral Beam derived from a gas cluster ion beam.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 16, 2020
    Inventors: Sean R. Kirkpatrick, Son T. Chau
  • Publication number: 20190336657
    Abstract: A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.
    Type: Application
    Filed: July 3, 2019
    Publication date: November 7, 2019
    Inventors: Richard C. Svrluga, Sean R. Kirkpatrick, Stephen M. Blinn
  • Publication number: 20190279872
    Abstract: A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.
    Type: Application
    Filed: January 14, 2019
    Publication date: September 12, 2019
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick, Michael J. Walsh, Richard C. Svrluga