Abstract: A low-cost high-frequency electronic device package and associated fabrication method are described wherein waveguide structures are formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.

Abstract: A low-cost high-frequency electronic device package and associated fabrication method are described wherein waveguide structures are formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.

Abstract: A tissue expansion device is provided. The device includes an expandable compartment adapted for implanting in a body of a subject; and a gas source adapted for implanting in a body of a subject and operably connected to the expandable compartment for inflation thereof by transfer of a gas thereto.

Abstract: A low-cost high-frequency electronic device package and associated fabrication method are described wherein waveguide structures are formed from the high frequency device to the package lead transition. The package lead transition is optimized to take advantage of waveguide interconnect structure.

Abstract: A hermetic media interface for a sensor package is disclosed. Preferably, the hermetic media interface is incorporated into a pressure sensor package for interfacing directly to fluid and/or gaseous media. In one embodiment, the pressure sensor package includes a semiconductor die and a pressure port that are housed in a pre-molded plastic package. A eutectic solder is coupled between the semiconductor die and the pressure port to solder the same to the semiconductor die. The semiconductor die may be metallized to enhance solderability. In an alternative embodiment, the pressure port is made from one or more plastic materials and the pressure port is attached to the semiconductor die with an adhesive. An integral stress-isolation region may optionally be incorporated on the semiconductor die.

Abstract: A chip-scale sensor package is described. In one embodiment, the chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate is bonded to the semiconductor cap using different types of materials. The semiconductor substrate and/or the semiconductor cap may optionally include a semiconductor device such as an electronically trimmable integrated circuit fabricated thereon. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.

Abstract: A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described.

Abstract: The present invention comprises the combination of one or more micromachined circuit elements and a micromachined DC-to-DC step-up converter on the same or different substrates, so as to allow the operation of the micromachined circuit element at a different voltage, typically a higher or a negative voltage, in comparison to the input power supply to the system. The micromachined structure of such a converter requires little chip area and is normally fully compatible with the micromachined structure of other micromachined circuit elements, such switches and resonators, providing obvious advantages when formed on the same substrate as such devices. Similarly, micromachined switches have the advantage of providing substantially greater isolation between the signal being switched and the signal doing the switching, and provide a much better ratio between the off resistance to the on resistance than can be achieved with transistor switching devices, such as by way of example, MOS switches.

Abstract: The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.

Abstract: A method is described for manufacturing a miniaturized accelerometer having a narrow bandwidth and behaving as a switch sensitive only to low frequencies such as are contained in earthquakes. The method includes provision of an unbalanced see-saw beam assembly composed of beams 2 and masses 3 at opposite ends of the beams 2. The beams 2 have their suspension at a location with slightly different distances from the masses 3 along a line parallel to and vertically offset from the line connecting centers of gravity of the masses 3.

Abstract: A varying apparent mass accelerometer 1 for detecting earthquake vibrations includes a frame 2 vibrating with an earthquake wave, a mass 51 supported on the frame 2 via a spring 52, electrodes 6 and 7 disposed above and below the mass 51, power sources 8 each applying a voltage across the electrodes 6 and 7, and a capacitance detector 9 for detecting changes in capacitance between the electrodes. The accelerometer 1 exerts a signal only when an acceleration exceeds a threshold.

Abstract: A method for bonding a silicon substrate and a glass substrate through an anodic-bonding process, including steps of: forming at least two holes in the glass substrate; forming a recess on the glass substrate, the recess confronting an undesired bonding portion defined in the silicon substrate; depositing a metal layer on the glass substrate with a predetermined pattern; depositing a dielectric layer on the metal layer, the insulating layer covering substantially the entire surface of the metal layer; and bonding the glass substrate and the semiconductor material.

Abstract: A semiconductor sensor comprising a semiconductor substrate and a glass substrate. The semiconductor substrate includes a support member having an opening centrally defined therein, a diaphragm positioned in the opening of the support member, and a flexible supporting means for supporting and coupling the diaphragm and the support member. The glass substrate includes a portion facing the diaphragm and the supporting means and at least one recess defined in this portion which faces the entirety of the supporting means. The glass substrate also includes a metal layer deposited on a surface of the glass substrate and a dielectric layer deposited on the metal layer such that the dielectric layer faces the diaphragm.

Abstract: A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the

Abstract: A cantilever for a scanning probe microscope is disclosed. The cantilever includes a piezoresistor for detecting the deflection of the cantilever, and a tip which is formed integrally with the cantilever. A process of fabricating such a cantilever is also disclosed, the process yielding a tip which has a high aspect ratio and a small radius of curvature at its apex. A combined atomic force/lateral force microscope including two or more piezoresistors responsive to both the bending and torsion of the cantilever is also disclosed.

Abstract: Forming micro-probe tips for an atomic force microscope, a scanning tunneling microscope, a beam electron emission microscope, or for field emission, by first thinning a tip of a first material, such as silicon. The tips are then reacted with a second material, such as atoms from an organic or ammonia vapor, at a temperature of about 1000.degree. C..+-.200.degree. C. and vacuum conditions for several minutes. Vapors such as methane, propane or acetylene will be converted to SiC or WC while ammonia will be converted to Si.sub.3 N.sub.4. The converted material will have different physical, chemical and electrical properties. For example, a SiC tip will be superhard, approaching diamond in hardness. Electrically conductive tips are suitable for field emission.