Abstract: Methods for the manufacture of stable strontium titanate nanocube sols are disclosed. The sols are useful in the manufacture of switchable layers suitable for RRAM applications and the switching performance is stable and reproducible. The RRAM layers comprise a mixture of strontium titanate nanocubes and surfactant.

Abstract: The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer; wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.

Abstract: The present disclosure relates to a solid-state light-emitting device that comprises at least two light-emitting layers comprising a transition metal dichalcolgenide material with embedded nanoparticles arranged to form an allowable energy level within the bandgap of the transition metal dichalcolgenide layer; the at least two light-emitting layers being sandwiched between two layers of a material with a bandgap larger than the transition metal dichalcolgenide material; and the at least two light-emitting layers being arranged one above the other in a manner such that, light emitted by one of the light-emitting layers travels across the other one of the light-emitting layers; and electrodes arranged to apply a voltage across the two layers of a material with a bandgap larger than the transition metal dichalcolgenide material; wherein, when a voltage within a predetermined range is applied to a pair of electrodes, photons with a predetermined wavelength are emitted by one or more of the at least two light-emit

Abstract: An electrical power transmission line conductor having a bundle of at least one electrical conductor configured for transmission of high voltage alternating current electrical power, at least one strengthening structure bundled with the electrical conductor to provide physical support to the electrical conductor, and at least one magnetocaloric structure having magnetocaloric material. A changing magnetic field generated by transmission of high voltage alternating current electrical power via the at least one conductor causes the magnetocaloric material composition to exhibit a magnetocaloric effect to regulate the operating temperature of the electrical power transmission line conductor.

Abstract: A magnetocaloric structure incorporating magnetocaloric material for inclusion in an electrical transmission line conductor, such that the magnetic Held generated by alternating current transmission cause the magnetocaloric material to exhibit a magnetocaloric effect. Also provided is an electrical power transmission line conductor comprising a bundle of at least one electrical conductor configured for transmission of high voltage alternating current electrical power, at least one strengthening structure bundled with the electrical conductor to provide physical support to the electrical conductor, and at least one magnetocaloric structure comprising magnetocaloric material. A changing magnetic field generated by transmission of high voltage alternating current electrical power via the at least one conductor cause the magnetocaloric material composition to exhibit a magnetocaloric effect to regulate the operating temperature of the electrical power transmission line conductor.

Abstract: The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer; wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.

Abstract: A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurality of a second element; and, wherein the memory structure has an electrical resistive state that can be changed in response to an electromotive force being applied thereto.

Abstract: Non-volatile Resistive RAM devices are described prepared using various nanocube dispersions and dispersion based deposition techniques including ink jet printing. Stretchable Resistive RAM devices are described that retain their switching properties after repeated stretch and relaxation cycles and show highly stable ON/OFF ratios after each cycle in the stretched and relaxed state.

Abstract: A method of forming oxide quantum dots is disclosed. The method may provide for the highly controlled formation of the oxide quantum dots. A composition comprising oxide quantum dots is also disclosed. The oxide quantum dots may be considered to be highly crystalline, allowing the oxide quantum dots and composition to be utilised at ambient conditions without requiring subsequent high temperature calcination. The transparent and conductive oxide quantum dots may find particular application in the large scale coating of a variety of substrates, including silicon, glass, polymers, or composites, etc., and may be used in windscreens, or windows of vehicles (such as automobiles, trains, aeroplanes, etc.) and/or buildings, etc., which require conductive capabilities, such as for the purposes of de-fogging or de-icing.

Abstract: A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurality of a second element; and, wherein the memory structure has an electrical resistive state that can be changed in response to an electromotive force being applied thereto.