Patents by Inventor Sean T. Houlihan

Sean T. Houlihan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Visible-swir hyper spectral photodetectors with reduced dark current
    Patent number: 11923470
    Abstract: A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: March 5, 2024
    Assignee: Sensors Unlimited, Inc.
    Inventors: Wei Zhang, Douglas Stewart Malchow, Michael J. Evans, Paul L. Bereznycky, Sean T. Houlihan
  • VISIBLE-SWIR HYPER SPECTRAL PHOTODETECTORS WITH REDUCED DARK CURRENT
    Publication number: 20230050990
    Abstract: A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.
    Type: Application
    Filed: October 24, 2022
    Publication date: February 16, 2023
    Applicant: Sensors Unlimited, Inc.
    Inventors: Wei Zhang, Douglas Stewart Malchow, Michael J. Evans, Paul L. Bereznycky, Sean T. Houlihan
  • VISIBLE-SWIR HYPER SPECTRAL PHOTODETECTORS WITH REDUCED DARK CURRENT
    Publication number: 20210104638
    Abstract: A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.
    Type: Application
    Filed: October 4, 2019
    Publication date: April 8, 2021
    Applicant: Sensors Unlimited, Inc.
    Inventors: Wei Zhang, Douglas Stewart Malchow, Michael J. Evans, Paul L. Bereznycky, Sean T. Houlihan